The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As.

(Ga,Mn)As is at the forefront of spintronics research exploring the synergy of ferromagnetism with the physics and the technology of semiconductors. However, the electronic structure of this model spintronics material has been debated and the systematic and reproducible control of the basic micromagnetic parameters and semiconducting doping trends has not been established. Here we show that seemingly small departures from the individually optimized synthesis protocols yield non-systematic doping trends, extrinsic charge and moment compensation, and inhomogeneities that conceal intrinsic properties of (Ga,Mn)As.

Spin Hall effect transistor.

The field of semiconductor spintronics explores spin-related quantum relativistic phenomena in solid-state systems. Spin transistors and spin Hall effects have been two separate leading directions of research in this field. We have combined the two directions by realizing an all-semiconductor spin Hall effect transistor.