Sub-monolayer (SML) deposition of InSb within InAs matrix by migration enhanced epitaxy tends to form type II SML nanostructures offering efficient light emission within the mid-infrared (MIR) range between 3 and 5 μm. In this work, we report on the Sb distribution in InSb/InAs SML nanostructures with InAs cap layers grown at temperatures lower than that associated with the under-grown InSb active layer. Analysis by transmission electron microscopy (TEM) in 002 dark field conditions shows that the reduction in the growth temperature of the InAs cap layer increases the amount of Sb deposited in the layers, in good agreement with the x-ray diffraction results.
View Article and Find Full Text PDFInSb/InAs sub-monolayer (SML) nanostructures such as SML quantum dots offer sharper emission spectra, a better modal gain and a larger modulation bandwidth compared to its Stranski-Krastanov counterpart. In this work, the Sb distribution of SML InSb layers grown by migration enhanced epitaxy has been analyzed by transmission electron microscopy (TEM) techniques. The analysis of the material by diffraction contrast in 002 dark field conditions and by atomic column resolved high angle annular dark field-scanning TEM reveal the presence of a low Sb content InSbAs continuous layer with scarce Sb-rich InSbAs agglomerates.
View Article and Find Full Text PDFDetecting and tracking moving objects (DATMO) is an essential component for autonomous driving and transportation. In this paper, we present a computationally low-cost and robust DATMO system which uses as input only 2D laser rangefinder (LRF) information. Due to its low requirements both in sensor needs and computation, our DATMO algorithm is meant to be used in current Autonomous Guided Vehicles (AGVs) to improve their reliability for the cargo transportation tasks at port terminals, advancing towards the next generation of fully autonomous transportation vehicles.
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