Silicon-on-insulator wavelength-selective filter with integrated detectors at the 2 µm wave band.

The short-wave infrared range is highly significant for spectroscopic sensing and upcoming optical communication applications. Integrating active and passive photonic components is essential to achieve compact optical solutions. In this paper, we show, for the first time to our knowledge, a wavelength-selective detection system based on the heterogeneous integration of two grating-coupled InGaAs photodetectors operating at the 2µm wave band, with a wavelength selectivity provided by a dual-channel Mach-Zehnder interferometer fabricated using a silicon-on-insulator (SOI) wafer.

100 Gbps PAM4 ultra-thin photodetectors integrated on SOI platform by micro transfer printing.

The integration of compact high-bandwidth III-V active devices in a scalable manner is highly significant for Silicon-on-insulator (SOI) photonic integrated circuits. To address this, we demonstrate the integration of pre-fabricated 21 × 57 µm InGaAs photodetector (PD) coupons with a thickness of 675 nm to a 500 nm SOI platform using a direct bonding micro-transfer printing process. The common devices are coupled to the Si waveguides via butt, grating and evanescent coupling schemes with responsivities of 0.

Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs.

Unlabelled: We investigate different architectures for parabolic-graded InGaAs metamorphic buffers grown on GaAs using transmission electron microscopy techniques. The different architectures include InGaP and AlInGaAs/InGaP superlattices with different GaAs substrate misorientations and the inclusion of a strain balancing layer. Our results correlate: (i) the density and distribution of dislocations in the metamorphic buffer and (ii) the strain in the next layer preceding the metamorphic buffer, which varies for each type of architecture.

Towards 3D characterisation of site-controlled InGaAs pyramidal QDs at the nanoscale.

Unlabelled: In this work, we report an extensive investigation via transmission electron microscopy (TEM) techniques of InGaAs/GaAs pyramidal quantum dots (PQDs), a unique site-controlled family of quantum emitters that have proven to be excellent sources of single and entangled photons. The most striking features of this system, originating from their peculiar fabrication process, include their inherently 3-dimensional nature and their interconnection to a series of nanostructures that are formed alongside them, such as quantum wells and quantum wires. We present structural and chemical data from cross-sectional and plan view samples of both single and stacked PQDs structures.

An intuitive protocol for polarization-entanglement restoral of quantum dot photon sources with non-vanishing fine-structure splitting.

Generation of polarization-entangled photons from quantum dots via the biexciton-exciton recombination cascade is complicated by the presence of an energy splitting between the intermediate excitonic levels, which severely degrades the quality of the entangled photon source. In this paper we present a novel, conceptually simple and straightforward proposal for restoring the entanglement of said source by applying a cascade of time-dependent operations on the emitted photons. This is in striking contrast with the techniques usually employed, that act on the quantum emitter itself in order to remove the fine structure splitting at its root.