Publications by authors named "E Pallecchi"
Epitaxial bilayer graphene, grown by chemical vapor deposition on SiC substrates without silicon sublimation, is crucial material for graphene field effect transistors (GFETs). Rigorous characterization methods, such as atomic force microscopy and Raman spectroscopy, confirm the exceptional quality of this graphene. Post-nanofabrication, extensive evaluation of DC and high-frequency properties enable the extraction of critical parameters such as the current gain () and cut-off frequency () of hundred transistors.
View Article and Find Full Text PDFArticle Synopsis
- The study examines how different transfer processes affect the quality, morphology, and electrical properties of monocrystalline graphene by using techniques like optical microscopy, scanning electron microscopy, Raman spectroscopy, and electrical measurements.
- It highlights that the controlled bubbling electrochemical delamination transfer method is a fast and effective way to transfer large graphene crystals without harming their quality.
- The research also finds that the oxidation of copper surfaces alters the strain experienced by graphene before transferring it to another substrate, but this strain is minimized after the transfer, resulting in high-quality, homogeneous graphene suitable for devices with low contact resistance.
Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs).
View Article and Find Full Text PDFCorrection for 'Transport mechanisms in a puckered graphene-on-lattice' by T. Xu et al., Nanoscale, 2018, 10, 7519-7525.
View Article and Find Full Text PDF