Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths.

Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength around 1550 nm. Here, we present silicon LEDs based on the electroluminescence of Er:O complexes in Si.

Tailoring Third-Harmonic Diffraction Efficiency by Hybrid Modes in High-Q Metasurfaces.

Metasurfaces are versatile tools for manipulating light; however, they have received little attention as devices for the efficient control of nonlinearly diffracted light. Here, we demonstrate nonlinear wavefront control through third-harmonic generation (THG) beaming into diffraction orders with efficiency tuned by excitation of hybrid Mie-quasi-bound states in the continuum (BIC) modes in a silicon metasurface. Simultaneous excitation of the high-Q collective Mie-type modes and quasi-BIC modes leads to their hybridization and results in a local electric field redistribution.

Third-harmonic light polarization control in magnetically resonant silicon metasurfaces.

Nonlinear metasurfaces have become prominent tools for controlling and engineering light at the nanoscale. Usually, the polarization of the total generated third harmonic is studied. However, diffraction orders may present different polarizations.

Increased Tenascin C, Osteopontin and HSP90 Levels in Plasmatic Small Extracellular Vesicles of Pediatric ALK-Positive Anaplastic Large Cell Lymphoma: New Prognostic Biomarkers?

Over the past 15 years, several biological and pathological characteristics proved their significance in pediatric anaplastic lymphoma kinase (ALK)-positive anaplastic large-cell lymphoma (ALCL) prognostic stratification. However, the identification of new non-invasive disease biomarkers, relying on the most important disease mechanisms, is still necessary. In recent years, plasmatic circulating small extracellular vesicles (S-EVs) gathered great importance both as stable biomarker carriers and active players in tumorigenesis.

Engineering of the spin on dopant process on silicon on insulator substrate.

We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into the substrate via SOD and then diffused by a rapid thermal annealing process.