Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping.

In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceeding solubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been extensively investigated for their unique characteristics compared to other pnictogen dopants. However, previous practical investigations have encountered challenges in achieving high nitrogen defect concentrations due to the low solubility and diffusivity of nitrogen in silicon, and the necessary non-equilibrium techniques, such as ion implantation, resulting in crystal damage and amorphisation.

Theoretical and Experimental Analysis of Single-Arm Bimodal Plasmo-Photonic Refractive Index Sensors.

In this paper, we study both theoretically and experimentally the sensitivity of bimodal interferometric sensors where interference occurs between two plasmonic modes with different properties propagating in the same physical waveguide. In contrast to the well-known Mach-Zehnder interferometric (MZI) sensor, we show for the first time that the sensitivity of the bimodal sensor is independent of the sensing area length. This is validated by applying the theory to an integrated plasmo-photonic bimodal sensor that comprises an aluminum (Al) plasmonic stripe waveguide co-integrated between two accessible SU-8 photonic waveguides.

High efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators.

Graphene modulators are considered a potential solution for achieving high-efficiency light modulation, and graphene-silicon hybrid-integrated modulators are particularly favorable due to their CMOS compatibility and low cost. The exploitation of graphene modulator latent capabilities remains an ongoing endeavour to improve the modulation and energy efficiency. Here, high-efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators are realized using gold-assisted transfer.

Graphene-Perovskite Fibre Photodetectors.

The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, fibre PDs are prepared by combining rolled graphene layers and photoactive perovskites.