An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computing.

We propose and demonstrate a novel physical computing paradigm based on an engineered unipolar memristor that exhibits symmetric SET switching with respect to voltage polarity. A one-dimensional array of these devices was sufficient to demonstrate an efficient Hamming distance comparator for two strings of analog states represented by voltages from the physical world. The comparator first simultaneously applies the two sets of voltages to the array of memristors, each of which is initially in its high resistance state and switches to its low resistance state only if the two voltages applied on that memristor differ by more than the switching threshold.

Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications.

Beyond use as high density non-volatile memories, memristors have potential as synaptic components of neuromorphic systems. We investigated the suitability of tantalum oxide (TaOx) transistor-memristor (1T1R) arrays for such applications, particularly the ability to accurately, repeatedly, and rapidly reach arbitrary conductance states. Programming is performed by applying an adaptive pulsed algorithm that utilizes the transistor gate voltage to control the SET switching operation and increase programming speed of the 1T1R cells.