Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O.

Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65x10(20) cm(-3) as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature.

Electrodynamics of a Coulomb glass in n-type silicon.

Measurements of the complex frequency dependent conductivity of uncompensated n-type silicon are reported. The experiments are done in the quantum limit, variant Planck's over 2pi omega>k(B)T, across a broad doping range on the insulating side of the metal-insulator transition. The low energy linear frequency dependence is consistent with theories of a Coulomb glass, but discrepancies exist in the relative magnitudes of the complex components.

Measurements of the complex conductivity of NbxSi(1-x) alloys on the insulating side of the metal-insulator transition.

We have conducted temperature and frequency dependent transport measurements in amorphous NbxSi1-x samples in the insulating regime. We find a temperature dependent dc conductivity consistent with variable range hopping in a Coulomb glass. The frequency dependent response in the millimeter-wave frequency range can be described by the expression sigma(omega) varies with (-iota omega)(alpha) with the exponent somewhat smaller than 1.