Macroscopic Monochalcogenide van der Waals Ferroics: Growth, Domain Structures, and Curie Temperature.

Two-dimensional and layered van der Waals materials promise to overcome the limitations of conventional ferroelectrics in terms of miniaturization and material integration, but synthesis has produced only small (up to few micrometer-sized) ferroic crystals. Here, we report the realization of in-plane ferroelectric few-layer crystals of the monochalcogenides tin(II) sulfide and selenide (SnS, SnSe) whose linear dimensions exceed the current state of the art by up to 1 order of magnitude. Such large crystals allow the investigation of ferroic domain patterns that are unaffected by edges and finite-size effects.

Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures.

Emergent phenomena in traditional ferroelectrics are frequently observed at heterointerfaces. Accessing such functionalities in van der Waals ferroelectrics requires the formation of layered heterostructures, either vertically stacked (similar to oxide ferroelectrics) or laterally stitched (without equivalent in 3D-crystals). Here, we investigate lateral heterostructures of the ferroelectric van der Waals semiconductors SnSe and SnS.

Evidence-Based Infant Assessment for Cerebral Palsy: Diagnosis Timelines and Intervention Access in a Newborn Follow-up Setting.

Evidence-based assessment pathways inform early detection of cerebral palsy and access to intervention. This study investigated the relationships between early evidence-based assessments, diagnosis timeline, and rehabilitation intervention access in a population of children with cerebral palsy who were seen between 2010 and 2022 at the University of Wisconsin Waisman Center Newborn Follow Up Clinic. Cerebral palsy-specific assessments were increasingly integrated after the publication of early detection guidelines by Novak et al.

Valley-selective carrier transfer in SnS-based van der Waals heterostructures.

Valleytronics, , use of the valley degree of freedom in semiconductors as an information carrier, is a promising alternative to conventional approaches for information processing. Transition metal dichalcogenides with degenerate /' valleys have received attention as prototype 2D/layered semiconductors for valleytronics, but these systems rely on exotic effects such as the valley-Hall effect for electrical readout of the valley occupancy. Non-traditional valleytronic systems hosting sets of addressable non-degenerate valleys could overcome this limitation.