Growth of crystalline Gd2O3 thin films with a high-quality interface on Si(100) by low-temperature H2O-assisted atomic layer deposition.

This work documents the first example of deposition of high-quality Gd(2)O(3) thin films in a surface-controlled, self-limiting manner by a water-based atomic layer deposition (ALD) process using the engineered homoleptic gadolinium guanidinate precursor [Gd(DPDMG)(3)]. The potential of this class of compound is demonstrated in terms of a true ALD process, exhibiting pronounced growth rates, a high-quality interface between the film and the substrate without the need for any additional surface treatment prior to the film deposition, and most importantly, encouraging electrical properties.

Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide.

An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc.

Specimen preparation for electron holography of semiconductor devices.

A reliable and quick method of preparing specimens for electron holography of semiconductor devices is described in detail. The method is based on conventional mechanical grinding and polishing, and argon-ion milling, providing a large ( approximately 100 microm) area of electron transparency, no curtaining and thin dead layers on the surfaces of specimens. The vacuum area, necessary for the reference wave, is cut into the specimen by a focused ion beam.

On specimen tilt for electron holography of semiconductor devices.

Electron holography can be successfully used for potential mapping on a nanometer scale. It relies on the fact that the phase of the electron wave is proportional to the electrostatic potential in the specimen. However, this proportionality is valid only in a kinematical condition, which is achieved by proper specimen orientation with respect to the electron beam.