Proton irradiation Of GaO Schottky diodes and NiO/GaO heterojunctions.

p-NiO/n-GaO heterojunction (HJ) diodes exhibit much larger changes in their properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the same material. In p-NiO/GaO HJ diodes, the narrow region adjacent to the HJ boundary is found to contain a high density of relatively deep centers with levels near E-0.

Influence of Exposure to a Wet Atmosphere on the UV-Sensing Characteristics of ZnO Nanorod Arrays.

Zinc oxide is a promising material for the creation of various types of sensors, in particular UV detectors. In this work, arrays of ordered nanorods were grown by chemical vapor deposition. The effect of environmental humidity on the sensing properties of zinc oxide nanorod arrays was investigated, and a prototype UV sensor using indium as an ohmic contact was developed.

An Experimental Study of Dislocation Dynamics in GaN.

The dynamics of dislocations introduced through indentation or scratching at room temperature into a few GaN layers that were grown using the HVPE, MOCVD and ELOG methods and had different dislocation densities were studied via the electron-beam-induced current and cathodoluminescence methods. The effects of thermal annealing and electron beam irradiation on dislocation generation and multiplication were investigated. It is shown that the Peierls barrier for dislocation glide in GaN is essentially lower than 1 eV; thus, it is mobile even at room temperature.

Electrical and Recombination Properties of Polar Orthorhombic κ-GaO Films Prepared by Halide Vapor Phase Epitaxy.

In this study, the structural and electrical properties of orthorhombic κ-GaO films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-GaO/AlN/Si structures, the formation of two-dimensional hole layers in the GaO was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of κ-GaO and AlN. Structural studies indicated that in the thickest κ-GaO/GaN/sapphire layer used, the formation of rotational nanodomains was suppressed.

Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices.

Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching. The operative mechanisms that are responsible for resistive switching are being intensively investigated, and three models explaining the change in the resistive states have been developed. These models are grounded in the metallic-like filamentary conduction, contact resistance modification and the oxidation of/reduction in the graphene oxide bulk.