Publications by authors named "E Arushanov"

Antimony sulfide (SbS) and antimony selenide (SbSe) compounds have attracted considerable attention for applications in different optoelectronic devices due to their notable optical and electrical properties, and due to the strong anisotropy of these properties along different crystallographic directions. However, the efficient use of these promising compounds still requires significant efforts in characterization of their fundamental properties. In the present study, Raman scattering and spectroscopic ellipsometry were used to investigate the vibrational and optical properties of SbSe and SbS bulk polycrystals grown by the modified Bridgman method.

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Resistivity, ρ(T), and magnetoresistance (MR) are investigated in the CuZnSnGeS single crystals, obtained by the chemical vapor transport method, between x = 0-0.70, in the temperature range of T ~ 50-300 K in pulsed magnetic field of B up to 20 T. The Mott variable-range hopping (VRH) conductivity is observed within broad temperature intervals, lying inside that of T ~ 80-180 K for different x.

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Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of CuZnGeS, deeper investigations of its transport properties are required. In the present manuscript, we investigate resistivity, ρ (T), magnetoresistance and Hall effect in p-type CuZnGeS single crystals in pulsed magnetic fields up to 20 T.

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We report on optical reflectivity experiments performed on Cd_{3}As_{2} over a broad range of photon energies and magnetic fields. The observed response clearly indicates the presence of 3D massless charge carriers. The specific cyclotron resonance absorption in the quantum limit implies that we are probing massless Kane electrons rather than symmetry-protected 3D Dirac particles.

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Resistivity, ρ(T, x), of Cu2Zn(Sn x Ge1-x )Se4 (CZTGeSe) single crystals with x  =  0-1, investigated at temperatures between T ~ 10-320 K, exhibits an activated character within the whole temperature range, attaining a minimum at x  =  0.47. Magnetoresistance (MR) of CZTGeSe with x  =  0.

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