Unlocking superior performance of broadband powerful mid-IR optical parametric amplifiers with a BaGaGeS crystal pumped at 1.24 µm.

We report on the development of a tunable (1.5-6.5 µm) femtosecond optical parametric amplifier (OPA) based on a novel, to the best of our knowledge, BaGaGeS (BGGS) crystal with a Cr:Forsterite pumping laser.

Single-shot femtosecond bulk micromachining of silicon with mid-IR tightly focused beams.

Being the second most abundant element on earth after oxygen, silicon remains the working horse for key technologies for the years. Novel photonics platform for high-speed data transfer and optical memory demands higher flexibility of the silicon modification, including on-chip and in-bulk inscription regimes. These are deepness, three-dimensionality, controllability of sizes and morphology of created modifications.

Control of spectral shift, broadening, and pulse compression during mid-IR self-guiding in high-pressure gases and their mixtures.

Precise control of the nonlinear optical phenomena is the limiting factor for the spectral broadening and pulse compression techniques for high-power laser systems. Here we demonstrate that generation of the blue and red components under filamentation of 4.55-μm mid-IR pulses can be easily adjusted independently through the use of inert and molecular gases, while uniform broadening up to 1-μm bandwidth at the 1/e level relies on the proper choice of gas mixture and its compounds partial pressure.

Role of wavelength in photocarrier absorption and plasma formation threshold under excitation of dielectrics by high-intensity laser field tunable from visible to mid-IR.

The development of high power mid-IR laser applications requires a study on laser induced damage threshold (LIDT) in the mid-IR. In this paper we have measured the wavelength dependence of the plasma formation threshold (PFT) that is a LIDT precursor. In order to interpret the observed trends numerically, a model describing the laser induced electron dynamics, based on multiple rate equations, has been developed.

Femtosecond graphene mode-locked Fe:ZnSe laser at 4.4 µm.

We report, for the first time, to the best of our knowledge, a femtosecond mode-locked Fe:ZnSe laser. Passive mode locking is implemented using graphene as a saturable absorber. The laser operates at 4.