The Effect of H Fluence Irradiation on the Optical, Structural, and Morphological Properties of ZnO Thin Films.

Polycrystalline zinc oxide (ZnO) thin films were deposited on soda-lime glass substrates using the chemical spray pyrolysis method at 450 °C. The samples were irradiated with 8 keV H ions at three different fluences using a Colutron ion gun. The effects of the irradiation on the structural, morphological, and optical properties were studied with different techniques, including Rutherford Backscattering Spectrometry (RBS), X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Ultraviolet and Visible Spectroscopy (UV-Vis).

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride.

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10 Ω·cm and high optical transmittance, in the visible range, of 50%-70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min.

Chromium and ruthenium-doped zinc oxide thin films for propane sensing applications.

Chromium and ruthenium-doped zinc oxide (ZnO:Cr) and (ZnO:Ru) thin solid films were deposited on soda-lime glass substrates by the sol-gel dip-coating method. A 0.6 M solution of zinc acetate dihydrate dissolved in 2-methoxyethanol and monoethanolamine was used as basic solution.