Thermal electron attachment to halogenated silanes in the gas phase.

Rationale: Silane derivatives play a crucial role in industrial plasma processes for the fabrication of various electronic devices such as lighting devices, solar cells, and displays. Accurate quantitative data are essential for modeling technological plasmas. This study reports the rate coefficients (k) and activation energies (E) for thermal electron attachment to SiCl, Si (CH)CHF, and SiCl (CH)Si(CH), which are key parameters for understanding the underlying processes in plasmas.

Formation of negative ions from cobalt tricarbonyl nitrosyl Co(CO)NO clusters.

Electron attachment and corresponding dissociative electron attachment (DEA) to cobalt tricarbonyl nitrosyl (Co(CO)NO) clusters have been studied by co-expansion with Ar gas into a high vacuum. A monochromatic electron beam was utilized to generate negative ions and the resulting reaction products were identified using mass spectrometry. The ion fragments corresponding to Co(CO)NO monomers closely resemble results from earlier gas phase experiments and studies conducted on Co(CO)NO in He nanodroplets.