[Piezoresistivity of ultra-thin poly-silicon layer by aluminum-induced layer exchange].

Poly-Si film, due to its favorable piezoresistive properties, has been widely used in piezoresistive sensors. The previous researches have shown that the ultra-thin poly-Si film have better piezoresistive properties than common poly-silicon film, and have promising future of application. A promising method to obtain large grained high quality poly-silicon films by low-temperature crystallization of an amorphous precursor material is the aluminum-induced layer exchange (ALILE).

[Preparation and characterization of poly-Si films on different topography substrates by AIC].

Polycrystalline silicon (poly-Si) thin-films were made on planar and textured glass substrates by aluminum-induced crystallization (AIC) of in situ amorphous silicon (a-Si) deposited by DC-magnetron. The poly-Si films were characterized by Raman spectroscopy, X-ray diffraction (XRD) and atomic force microscopy (AFM). A narrow and symmetrical Ranman peak at the wave number of about 521 cm(-1) was observed for all samples, indicating that the films were fully crystallized.

[Quantitative determination of imidacloprid by infrared absorption spectrometry].

The content of imidacloprid in pesticide is usually measured by high-performance liquid chromatography, which is precise but time-consuming. In the present work the content of imidacloprid in pesticide was measured by infrared spectroscopy with pressing potassium bromide troche (KBr). A comparison of infrared spectra between analytic imidacloprid and commercial pesticide showed that the absorption peak of imidacloprid at 939.

[Spectroscopy research on the origin mechanism for light induced delayed fluorescence of chloroplast].

Research of the mechanism for delayed fluorescence origin play an important role in the application of DF. Based onthe charge recombination theory, the mechanism for delayed fluorescence origin is theoretically analyzed in this paper. The decay kinetics of DF, depending on the backward transport electron and oxidized state P680+, can be well fitted by poly-exponent.