Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation.

We investigated the effects of X-ray irradiation on the electrical characteristics of an amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT). The a-IGZO TFT showed a negative threshold voltage ( ) shift of -6.2 V after 100 Gy X-ray irradiation.

Highly Bendable and Durable Transparent Electromagnetic Interference Shielding Film Prepared by Wet Sintering of Silver Nanowires.

Electromagnetic (EM) wave emissions from wearable or flexible smart display devices can cause product malfunction and have a detrimental effect on human health. Therefore, EM shielding strategies are becoming increasingly necessary. Consequently, herein, we prepared a transparent acrylic polymer-coated/reduced graphene oxide/silver nanowire (Ag NW) (A/RGO/SANW) EM interference (EMI) shielding film via liquid-to-vapor pressure-assisted wet sintering.

Conoscopy as a Failure Analysis Method for Single Crystals.

Conoscopy is widely used to evaluate single crystals used as substrates on which epitaxial layers are grown in the LED industry, where the quality of the single crystal affects the reliability of the final product, the LED chip, and the package. However, the application of this method is currently restricted to characterizing birefringence. We performed conoscopy measurements on single crystals with failure modes (e.

Alignment of One-Dimensional SnO2 Lines by Electrohydrodynamic Jet Printing.

One-dimensional (1-D) SnO2 line as a representative semiconducting oxide were formed by electro- hydrodynamic jet-printing (EHD) of tin chloride pentahydrate and polyvinylpyrrolidone (PVP, 1,200 k, Aldrich) solution ink. The 1-D polymer lines including Sn precursors were created by controlling the viscosity, that is, polymer/tin precursor ratio, and adjusting printing conditions such as tip to substrate distance, applying voltage, flow rate of ink and velocity. The printed lines were dried at 200 degrees C to get rid of solvent and finally heat-treated at 600 degrees C to burn out PVP and form tin oxide line.

Failure Analysis of a Nickel-Plated Electronic Connector Due to Salt-Induced Corrosion (ENGE 2014).

When electronic connectors in mobile devices are miniaturized, the thickness of plating decreases. However, this thin plating is expected to decrease the life of the connector due to problems with corrosion. In this study, salt spray aging tests were performed on miniaturized nickel-plated stainless steel electronic connectors to observe failure mechanisms in realistic environments.

Characterization of Mn-Based Self-Forming Barriers on Low-k Samples With or Without UV Curing Treatment.

In the present work, we report a Cu-Mn alloy as a material for the self-forming barrier process, and we investigated the diffusion barrier properties of the self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films with 3.8 at% Mn were directly deposited onto low-k dielectrics by co-sputtering followed by annealing at various temperatures.

Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature.

The photochemical tunability of the charge-transport mechanism in metal-oxide semiconductors is of great interest since it may offer a facile but effective semiconductor-to-metal transition, which results from photochemically modified electronic structures for various oxide-based device applications. This might provide a feasible hydrogen (H)-radical doping to realize the effectively H-doped metal oxides, which has not been achieved by thermal and ion-implantation technique in a reliable and controllable way. In this study, we report a photochemical conversion of InGaZnO (IGZO) semiconductor to a transparent conductor via hydrogen doping to the local nanocrystallites formed at the IGZO/glass interface at room temperature.

Effect of Ag nanowire addition into nanoparticle paste on the conductivity of Ag patterns printed by gravure offset method.

This paper focuses on the effect of Ag nanowire addition into a commercial Ag nanopaste and the printability evaluation of the mixed paste by the gravure offset printing methodology. Ag nanowires were synthesized by a modified polyol method, and a small amount of them was added into a commercial metallic paste based on Ag nanoparticles of 50 nm in diameter. Two annealing temperatures were selected for comparison, and electrical conductivity was measured by four point probe method.

Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping.

In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. A highly conductive HECL (carrier concentration at 1.6 × 10(13) cm(-2), resistivity at 4.

Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.

Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering.

Fabrication of an a-IGZO thin film transistor using selective deposition of cobalt by the self-assembly monolayer (SAM) process.

Interest in transparent oxide thin film transistors utilizing ZnO material has been on the rise for many years. Recently, however, IGZO has begun to draw more attention due to its higher stability and superior electric field mobility when compared to ZnO. In this work, we address an improved method for patterning an a-IGZO film using the SAM process, which employs a cost-efficient micro-contact printing method instead of the conventional lithography process.

Synthesis of titanate nanotube from different phases of TiO2 powders and its hydrogen absorption capacity.

Titanate nanotubes were synthesized by hydrothermal method with different NaOH concentration using various TiO2 powders (P-25, rutile, anatase, and Ni doped TiO2) at 120 degrees C for 24 hrs. At 10 M NaOH, Ni doped TiO2 powders formed the titanate nanotubes which consisted of layered structure such as A2Ti2O5.H2O, A2Ti3O7, H2TiO.

Structural characterization of titanate nanotubes for lithium storage.

Titanate nanotubes were synthesized by hydrothermal method using various TiO2 precursors as starting materials. The electrochemical properties were investigated by cyclic voltammetric methods. The microstructure and morphology of the synthesized powders were characterized by XRD, TEM.