Non-Markovian Hole Excess Noise in Avalanche Amorphous Selenium Thin Films.

Enhancing the signal-to-noise ratio in avalanche photodiodes by utilizing impact ionization gain requires materials exhibiting low excess noise factors. Amorphous selenium (-Se) as a wide bandgap at ∼2.1 eV, a solid-state avalanche layer, demonstrates single-carrier hole impact ionization gain and manifests ultralow thermal generation rates.

Modeling Dark Current Conduction Mechanisms and Mitigation Techniques in Vertically Stacked Amorphous Selenium-Based Photodetectors.

Amorphous selenium (-Se) with its single-carrier and non-Markovian, hole impact ionization process can revolutionize low-light detection and emerge to be a solid-state replacement to the vacuum photomultiplier tube (PMT). Although -Se-based solid-state avalanche detectors can ideally provide gains comparable to PMTs, their development has been severely limited by the irreversible breakdown of inefficient hole blocking layers (HBLs). Thus, understanding of the transport characteristics and ways to control electrical hot spots and, thereby, the breakdown voltage is key to improving the performance of avalanche -Se devices.

Monte Carlo Solution of High Electric Field Hole Transport Processes in Avalanche Amorphous Selenium.

Amorphous selenium lacks the structural long-range order present in crystalline solids. However, the stark similarity in the short-range order that exists across its allotropic forms, augmented with a shift to non-activated extended-state transport at high electric fields beyond the onset of impact ionization, allowed us to perform this theoretical study, which describes the high-field extended-state hole transport processes in amorphous selenium by modeling the band-transport lattice theory of its crystalline counterpart trigonal selenium. An in-house bulk Monte Carlo algorithm is employed to solve the semiclassical Boltzmann transport equation, providing microscopic insight to carrier trajectories and relaxation dynamics of these non-equilibrium "hot" holes in extended states.

Angular Dependence of Solar Cell Parameters in Crystalline Silicon Solar Cells Textured with Periodic Array of Microholes.

Surface texturing is an indispensable way of increasing absorption in solar cells. In order to properly characterize the effect of texturing, the angular dependence of the incidence light should be addressed. This is particularly important when the actual application where the incidence angle of the sunlight varies during the day is considered.