Understanding Defects in Amorphous Silicon with Million-Atom Simulations and Machine Learning.

The structure of amorphous silicon (a-Si) is widely thought of as a fourfold-connected random network, and yet it is defective atoms, with fewer or more than four bonds, that make it particularly interesting. Despite many attempts to explain such "dangling-bond" and "floating-bond" defects, respectively, a unified understanding is still missing. Here, we use advanced computational chemistry methods to reveal the complex structural and energetic landscape of defects in a-Si.

Computer simulation of carbonization and graphitization of coal.

This study describes computer simulations of carbonization and graphite formation, including the effects of hydrogen, nitrogen, oxygen, and sulfur. We introduce a novel technique to simulate carbonization, 'Simulation of Thermal Emission of Atoms and Molecules (STEAM)', designed to elucidate volatile outgassing and density variations in the intermediate material during carbonization. The investigation analyzes the functional groups that endure through high-temperature carbonization and examines the graphitization processes in carbon-rich materials containing non-carbon impurity elements.

Self-Assembly and the Properties of Micro-Mesoporous Carbon.

This study introduces a new approach for constructing atomistic models of nanoporous carbon by randomly distributing carbon atoms and pore volumes in a periodic box and then using empirical and molecular simulation tools to find the suitable energy-minimum structures. The models, consisting of 5000, 8000, 12000, and 64000 atoms, each at mass densities of 0.5, 0.

Ab Initio Simulation of Amorphous Graphite.

An amorphous graphite material has been predicted from molecular dynamics simulation using ab initio methods. Carbon materials reveal a strong proclivity to convert into a sp^{2} network and then layer at temperatures near 3000 K within a density range of ca. 2.

Origins of structural and electronic transitions in disordered silicon.

Structurally disordered materials pose fundamental questions, including how different disordered phases ('polyamorphs') can coexist and transform from one phase to another. Amorphous silicon has been extensively studied; it forms a fourfold-coordinated, covalent network at ambient conditions and much-higher-coordinated, metallic phases under pressure. However, a detailed mechanistic understanding of the structural transitions in disordered silicon has been lacking, owing to the intrinsic limitations of even the most advanced experimental and computational techniques, for example, in terms of the system sizes accessible via simulation.

High Precision Detection of Change in Intermediate Range Order of Amorphous Zirconia-Doped Tantala Thin Films Due to Annealing.

Understanding the local atomic order in amorphous thin film coatings and how it relates to macroscopic performance factors, such as mechanical loss, provides an important path towards enabling the accelerated discovery and development of improved coatings. High precision x-ray scattering measurements of thin films of amorphous zirconia-doped tantala (ZrO_{2}-Ta_{2}O_{5}) show systematic changes in intermediate range order (IRO) as a function of postdeposition heat treatment (annealing). Atomic modeling captures and explains these changes, and shows that the material has building blocks of metal-centered polyhedra and the effect of annealing is to alter the connections between the polyhedra.

Quantifying Chemical Structure and Machine-Learned Atomic Energies in Amorphous and Liquid Silicon.

Amorphous materials are being described by increasingly powerful computer simulations, but new approaches are still needed to fully understand their intricate atomic structures. Here, we show how machine-learning-based techniques can give new, quantitative chemical insight into the atomic-scale structure of amorphous silicon (a-Si). We combine a quantitative description of the nearest- and next-nearest-neighbor structure with a quantitative description of local stability.

Amorphous graphene: a constituent part of low density amorphous carbon.

In this paper, we provide evidence that low density nano-porous amorphous carbon (a-C) consists of interconnected regions of amorphous graphene (a-G). We include experimental information in producing models, while retaining the power and accuracy of ab initio methods with no biasing assumptions. Our models are highly disordered with predominant sp2 bonding and ring connectivity mainly of sizes 5-8.

Inversion of diffraction data for amorphous materials.

The general and practical inversion of diffraction data-producing a computer model correctly representing the material explored-is an important unsolved problem for disordered materials. Such modeling should proceed by using our full knowledge base, both from experiment and theory. In this paper, we describe a robust method to jointly exploit the power of ab initio atomistic simulation along with the information carried by diffraction data.

Sculpting the band gap: a computational approach.

Materials with optimized band gap are needed in many specialized applications. In this work, we demonstrate that Hellmann-Feynman forces associated with the gap states can be used to find atomic coordinates that yield desired electronic density of states. Using tight-binding models, we show that this approach may be used to arrive at electronically designed models of amorphous silicon and carbon.

Simulations of silver-doped germanium-selenide glasses and their response to radiation.

Chalcogenide glasses doped with silver have many applications including their use as a novel radiation sensor. In this paper, we undertake the first atomistic simulation of radiation damage and healing in silver-doped Germanium-selenide glass. We jointly employ empirical potentials and ab initio methods to create and characterize new structural models and to show that they are in accord with many experimental observations.

Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film.

In this paper, we show for the first time that ultrafast light illumination can induce an unusually broad transient optical absorption (TA), spanning of ≈ 200 nm in the sub-bandgap region of chalcogenide GeSe2 thin films, which we interpret as being a manifestation of creation and annihilation of light induced defects. Further, TA in ultrashort time scales show a maximum at longer wavelength, however blue shifts as time evolves, which provides the first direct evidence of the multiple decay mechanisms of these defects. Detailed global analysis of the kinetic data clearly demonstrates that two and three decay constants are required to quantitatively model the experimental data at ps and ns respectively.

The work done by an external electromagnetic field.

Ehrenfest's theorem is used to derive the rate of change of kinetic energy induced by an external field. The expression for the power is valid for any electromagnetic field in arbitrary gauge. We discuss the applicable conditions for the Mott-Davis and Moseley-Lukes form of the Kubo-Greenwood formula (KGF) for the electrical conductivity which has been implemented in ab initio codes.

Comparison of the Kubo formula, the microscopic response method, and the Greenwood formula.

For a mechanical perturbation, the microscopic response method is equivalent to and more convenient to use than the Kubo formula. When the gradient of the carrier density is small, the current density reduces to that used by Greenwood.

Alternative approach to computing transport coefficients: application to conductivity and Hall coefficient of hydrogenated amorphous silicon.

We introduce a theoretical framework for computing transport coefficients for complex materials with extended states, and defect or band-tail states originating from static topological disorder. As a first example, we resolve long-standing inconsistencies between experiment and theory pertaining to the conductivity and Hall mobility for amorphous silicon and show that the Hall sign anomaly is a consequence of localized states. Next, we compute the ac conductivity of amorphous polyaniline.

Structure determination of disordered materials from diffraction data.

We show that the information gained in spectroscopic experiments regarding the number and distribution of atomic environments can be used as a valuable constraint in the refinement of the atomic-scale structures of nanostructured or amorphous materials from pair distribution function (PDF) data. We illustrate the effectiveness of this approach for three paradigmatic disordered systems: molecular C60, a-Si, and a-SiO2. Much improved atomistic models are attained in each case without any a priori assumptions regarding coordination number or local geometry.

Materials modeling by design: applications to amorphous solids.

In this paper, we review a host of methods used to model amorphous materials. We particularly describe methods which impose constraints on the models to ensure that the final model meets a priori requirements (on structure, topology, chemical order, etc). In particular, we review work based on quench from the melt simulations, the 'decorate and relax' method, which is shown to be a reliable scheme for forming models of certain binary glasses.

Atomistic origin of urbach tails in amorphous silicon.

Exponential band edges have been observed in a variety of materials, both crystalline and amorphous. In this Letter, we infer the structural origins of these tails in amorphous and defective crystalline Si by direct calculation with current ab initio methods. We find that exponential tails appear in relaxed models of diamond silicon with suitable extended defects that emerge from relaxing point defects.

Maximum entropy and the problem of moments: a stable algorithm.

We present a technique for entropy optimization to calculate a distribution from its moments. The technique is based upon maximizing a discretized form of the Shannon entropy functional by mapping the problem onto a dual space where an optimal solution can be constructed iteratively. We demonstrate the performance and stability of our algorithm with several tests on numerically difficult functions.

Spatial decay of the single-particle density matrix in insulators: analytic results in two and three dimensions.

Analytic results for the asymptotic decay of the electron density matrix in insulators have been obtained in all three dimensions (D = 1,2,3) for a tight-binding model defined on a simple cubic lattice. The anisotropic decay length is shown to be dependent on the energy parameters of the model. The existence of the power-law prefactor, proportional, variant r(-D/2), is demonstrated.

Electronic structure of glassy chalcogenides As4Se4 and As2Se3: a joint theoretical and experimental study.

We present an interpretation of the x-ray absorption spectra of arsenic chalcogenide glasses, As4Se4 and As2Se3, from a first-principles calculation. Our calculation identifies the atomistic origins of the observed photoemission data. The importance of structural "building blocks" present in a particular glass to the electron states is emphasized.

Direct calculation of light-induced structural change and diffusive motion in glassy As2Se3.

Photostructural change of glassy As2Se3 was simulated on an experimentally credible model with excited electronic dynamics within first-principles molecular dynamics. Bond breaking and bond switching reactions account for local changes around defect sites at the short time phase of illumination. For long-time relaxation, defect pairs associated with band tail states become involved in a rearrangement in the network, giving rise to a low energy, nonlocal "polaronlike" collective oscillation.

The structure of electronic states in amorphous silicon.

We illustrate the structure and dynamics of electron states in amorphous Si. The nature of the states near the gap at zero temperature is discussed and especially the way the structure of the states changes for energies ranging from midgap into either band tail (Anderson transition). We then study the effect of lattice vibrations on the eigenstates, and find that electronic states near the optical gap can be strongly influenced by thermal modulation of the atomic positions.