High-Q-factor AlO micro-trench cavities integrated with silicon nitride waveguides on silicon.

We report on the design and performance of high-Q integrated optical micro-trench cavities on silicon. The microcavities are co-integrated with silicon nitride bus waveguides and fabricated using wafer-scale silicon-photonics-compatible processing steps. The amorphous aluminum oxide resonator material is deposited via sputtering in a single straightforward post-processing step.

Whispering gallery germanium-on-silicon photodetector.

We design and demonstrate, to the best of our knowledge, the first whispering gallery germanium-on-silicon photodetector with evanescent coupling from a silicon bus waveguide in a CMOS-compatible process. The small footprint (63.6  μm), high responsivity (∼1.

Monolithically-integrated distributed feedback laser compatible with CMOS processing.

An optically-pumped, integrated distributed feedback laser is demonstrated using a CMOS compatible process, where a record-low-temperature deposited gain medium enables integration with active devices such as modulators and detectors. A pump threshold of 24.9 mW and a slope efficiency of 1.

Ultra-narrow-linewidth AlO:Er lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform.

We report ultra-narrow-linewidth erbium-doped aluminum oxide (AlO:Er) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiN) segments buried under silicon dioxide (SiO) with a layer AlO:Er deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infra-red wavelengths (950-2000 nm).

Wavelength division multiplexed light source monolithically integrated on a silicon photonics platform.

We demonstrate monolithic integration of a wavelength division multiplexed light source for silicon photonics by a cascade of erbium-doped aluminum oxide (AlO:Er) distributed feedback (DFB) lasers. Four DFB lasers with uniformly spaced emission wavelengths are cascaded in a series to simultaneously operate with no additional tuning required. A total output power of -10.

Mode-evolution-based coupler for high saturation power Ge-on-Si photodetectors.

We propose a mode-evolution-based coupler for high saturation power germanium-on-silicon photodetectors. This coupler uniformly illuminates the intrinsic germanium region of the detector, decreasing saturation effects, such as carrier screening, observed at high input powers. We demonstrate 70% more photocurrent generation (9.

Large-scale silicon nitride nanophotonic phased arrays at infrared and visible wavelengths.

We demonstrate passive large-scale nanophotonic phased arrays in a CMOS-compatible silicon photonic platform. Silicon nitride waveguides are used to allow for higher input power and lower phase variation compared to a silicon-based distribution network. A phased array at an infrared wavelength of 1550 nm is demonstrated with an ultra-large aperture size of 4  mm×4  mm, achieving a record small and near diffraction-limited spot size of 0.

Ultra-compact and low-threshold thulium microcavity laser monolithically integrated on silicon.

We demonstrate an ultra-compact and low-threshold thulium microcavity laser that is monolithically integrated on a silicon chip. The integrated microlaser consists of an active thulium-doped aluminum oxide microcavity beside a passive silicon nitride bus waveguide, which enables on-chip pump-input and laser-output coupling. We observe lasing in the wavelength range of 1.

C-band swept wavelength erbium-doped fiber laser with a high-Q tunable interior-ridge silicon microring cavity.

We demonstrate swept-wavelength operation of an erbium-doped fiber laser using a tunable silicon microring cavity. The microring cavity is designed to have 35 nm free spectral range, a high Q of 1.5 × 10, and low insertion loss of <0.

Silicon wavelength-selective partial-drop broadcast filter bank.

We propose an approach to a wavelength-selective 1×N port optical broadcast network demonstrating the approach in a 1×8 port parallel optical drop filter bank utilizing adiabatic micro-ring tunable filters. The micro-ring filters exhibit first-order 92.7±3.

Integrated heterodyne interferometer with on-chip modulators and detectors.

We demonstrate, to our knowledge, the first on-chip heterodyne interferometer fabricated on a 300-mm CMOS compatible process that exhibits root-mean-square (RMS) position noise on the order of 2 nm. Measuring 1 mm by 6 mm, the interferometer is also, to our knowledge, the smallest heterodyne interferometer demonstrated to date and will surely impact numerous interferometric and metrology applications, including displacement measurement, laser Doppler velocimetry and vibrometry, Fourier transform spectroscopy, imaging, and light detection and ranging (LIDAR). Here we present preliminary results that demonstrate the displacement mode.

Generating and identifying optical orbital angular momentum with silicon photonic circuits.

Here, we propose and demonstrate a silicon nanophotonic phased array that is capable of generating light carrying optical orbital angular momentum (OAM). Optical beams carrying different orbital angular momenta have been generated. In addition, the generated OAM wavefronts are experimentally identified by interfering with another on-chip generated Gaussian beam, opening up opportunities of integrating conventional optical systems and functionalities on to a silicon chip.

Integrated phased array for wide-angle beam steering.

We demonstrate an on-chip optical phased array fabricated in a CMOS compatible process with continuous, fast (100 kHz), wide-angle (51°) beam-steering suitable for applications such as low-cost LIDAR systems. The device demonstrates the largest (51°) beam-steering and beam-spacing to date while providing the ability to steer continuously over the entire range. Continuous steering is enabled by a cascaded phase shifting architecture utilizing, low power and small footprint, thermo-optic phase shifters.

Monolithic erbium- and ytterbium-doped microring lasers on silicon chips.

We demonstrate monolithic 160-µm-diameter rare-earth-doped microring lasers using silicon-compatible methods. Pump light injection and laser output coupling are achieved via an integrated silicon nitride waveguide. We measure internal quality factors of up to 3.

CMOS-compatible 75 mW erbium-doped distributed feedback laser.

On-chip, high-power, erbium-doped distributed feedback lasers are demonstrated in a CMOS-compatible fabrication flow. The laser cavities consist of silicon nitride waveguide and grating features, defined by wafer-scale immersion lithography and an erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The large mode size lasers demonstrate single-mode continuous wave operation with a maximum output power of 75 mW without any thermal damage.

Four-port integrated polarizing beam splitter.

In this Letter, we report on the first integrated four-port polarizing beam splitter. The device operates on the principle of mode evolution and was implemented in a silicon-on-insulator silicon photonics platform and fabricated on a 300 mm CMOS line using 193 nm optical immersion lithography. The adiabatic transition forming of the structure enabled over a 150 nm bandwidth from λ~1350 to λ~1500  nm, achieving a cross-talk level below -10  dB over the entire band.

Two-dimensional apodized silicon photonic phased arrays.

In this Letter, we demonstrate an 8×8 apodized silicon photonic phased array where the emission from each of 64 nanoantennas was tailored to exhibit Gaussian-shaped intensity distributions in the near field so that the sidelobes of the generated far-field optical beam were suppressed compared to that of a uniform phased array. With the aid of the 72 thermo-optic phase tuners directly integrated within the phased array, we dynamically shaped the generated optical beam in the far field in a variety of ways.

Uniformly spaced λ/4-shifted Bragg grating array with wafer-scale CMOS-compatible process.

We report on an integrated λ/4-shifted Bragg grating array using a wafer-scale complementary metal-oxide semiconductor (CMOS) compatible process with silicon-nitride waveguides. A sidewall grating was used to simplify the fabrication process, and a sampled Bragg grating with equivalent phase-shift structure was employed to achieve an accurate λ/4 phase shift. A four-channel λ/4-shifted Bragg grating array with highly uniform channel spacing was demonstrated with a measured channel spacing variation below 10 pm (1.

Method for characterization of Si waveguide propagation loss.

A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.