Bipolar Modulation in a Self-Powered Ultra-Wide Photodetector Based on BiSe/AlInAsSb Heterojunction for Wavelength-Sensitive Imaging and Encrypted Optical Communication.

Broadband photodetectors (PDs) have garnered significant attention due to their ability to detect optical signals across a wide wavelength range, with applications spanning military reconnaissance, environmental monitoring, and medical imaging. However, existing broadband detectors face several practical challenges, including limited detection range, uneven photoresponse, and difficult to distinguish multispectral signals. To address these limitations, this study presents a self-powered ultra-wide PD based on the BiSe/AlInAsSb heterojunction.

InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors.

A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band bandgap engineered GaAsSb/AlGaAsSb/T2SL (InGa As/GaAsSb) infrared photodetector, vertically stacked in a monolithic grown on InP substrate, is demonstrated. GaAsSb NIR sub-detector and T2SL eSWIR sub-detector are operated under small forward and reverse bias, respectively. The GaAsSb sub-detector functions within the NIR spectrum, with a 100% cutoff wavelength of 1.

Noise equivalent temperature difference study of type-II superlattice MWIR focal plane arrays for high operating temperature performance.

Achieving high operating temperature (HOT) plays a crucial role in miniaturizing type-II superlattice (T2SL) mid-wavelength infrared (MWIR) focal plane arrays (FPAs). However, their full potential has yet to be realized due to a lack of complete understanding of their operation from the perspective of detection principles. Here, by investigating the photon transmission path and optoelectronic performance of the simulated devices, a detailed noise equivalent temperature difference (NETD) model of the T2SL MWIR FPAs was established.

Investigation of the Absorption Spectrum of InAs Doping Superlattice Solar Cells.

InAs doping superlattice-based solar cells have great advantages in terms of the ability to generate clean energy in space or harsh environments. In this paper, multi-period InAs doping superlattice solar cells have been prepared..

High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra.

High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.

High-Performance Anodic Vulcanization-Pretreated Gated P-π-M-N InAs/GaSb Superlattice Long-Wavelength Infrared Detector.

The InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum efficiency (QE). Forcing the active region to be p-type through proper doping can highly improve QE, and the gating technique can be employed to greatly enhance electrical performance.