Fabrication of high quality lead-free double perovskite CsAgBiBrthin film and its application in memristor with ultralow operation voltage.

Recently, the lead-free double perovskite CsAgBiBrhas been considered as a promising candidate for next-generation nonvolatile memory and artificial synapse devices due to its high stability and low toxicity compared to its lead-based counterparts. In this work, we developed a simple and effective method to produce high-quality lead-free double perovskite CsAgBiBrthin films without pinholes and particles by applying a low-pressure assisted method under ambient condition with a relative humidity (RH) of about 45%. The formation of pinholes and Ag precipitation in the perovskite CsAgBiBr6 films is effectively suppressed by the proper ratio of N,N-dimenthylformamide (DMF) mixed in dimethyl sulfoxide (DMSO) solvents.

A semiconducting hybrid of RhO/GaN@InGaN for simultaneous activation of methane and water toward syngas by photocatalysis.

Prior to the eventual arrival of carbon neutrality, solar-driven syngas production from methane steam reforming presents a promising approach to produce transportation fuels and chemicals. Simultaneous activation of the two reactants, i.e.

Silicon-Nanomembrane-Based Broadband Synaptic Phototransistors for Neuromorphic Vision.

Neuromorphic vision has been attracting much attention due to its advantages over conventional machine vision (e.g., lower data redundancy and lower power consumption).

Alkaline earth metal ion doping to enhance the light emission from Er:SnO nanocrystal Co-doped silica films.

Alkaline earth metal ions (Mg, Ca, Sr) have been introduced into Er:SnO nanocrystal co-doped silica thin films fabricated by a sol-gel method combined with a spin-coating technique. It is found that the incorporation of alkaline earth metal ions can enhance the light emission from Er at the wavelength around 1540 nm and the strongest enhancement is observed in samples doped with 5 mol% Sr ions. Based on X-ray diffraction, X-ray photoelectron spectroscopy and other spectroscopic measurements, the improved light emission can be attributed to more oxygen vacancies, better crystallinity and a stronger cross-relaxation process with the introduction of alkaline earth metal ions.

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode.

Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO (~8.9 eV).

Experimental observations on metal-like carrier transport and Mott hopping conduction behaviours in boron-doped Si nanocrystal multilayers.

Studies on the carrier transport characteristics of semiconductor nanomaterials are the important and interesting issues which are helpful for developing the next generation of optoelectronic devices. In this work, we fabricate B-doped Si nanocrystals/SiOmultilayers by plasma enhanced chemical vapor deposition with subsequent high temperature annealing. The electronic transport behaviors are studied via Hall measurements within a wide temperature range (30-660 K).

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review.

GaO has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in the field of GaO-based gas sensors. We begin with a brief introduction of the polymorphs and basic electric properties of GaO.

Enhanced subband light emission from Si quantum dots/SiO multilayers via phosphorus and boron co-doping.

Seeking light sources from Si-based materials with an emission wavelength meeting the requirements of optical telecommunication is a challenge nowadays. It was found that the subband emission centered near 1200 nm can be achieved in phosphorus-doped Si quantum dots/SiO multilayers. In this work, we propose the phosphorus/boron co-doping in Si quantum dots/SiO multilayers to enhance the subband light emission.

Multiple channels to enhance near-infrared emission from SiO-SnO:Er films by Ba ion doping.

Ba ions co-doped SiO-SnO:Er thin films are prepared using a sol-gel method combined with a spin-coating technique and post-annealing treatment. The influence of Ba ion doping on the photoluminescence properties of thin films is carefully investigated. The enhancement of near-infrared (NIR) emission of Er ions by as much as 12 times is obtained co-doping with Ba ions.

Variation on the Microstructure and Mechanical Properties of Ti-Al-N Films Induced by RF-ICP Ion Source Enhanced Reactive Nitrogen Plasma Atmosphere.

Acquiring the optimum growth conditions of Ti-Al-N films, the effects of gas atmosphere, especially the reactive plasma on the material microstructures, and mechanical properties are still a fundamental and important issue. In this study, Ti-Al-N films are reactively deposited by radio frequency inductively coupled plasma ion source (RF-ICPIS) enhanced sputtering system. Different nitrogen gas flow rates in letting into the ion source are adopted to obtain nitrogen plasma densities and alter deposition atmosphere.

Low power consumption light emitting device containing TiO:Er thin film prepared by sol-gel method.

Er ions doped titanium dioxide (TiO) thin films have been prepared by sol-gel method. The photoluminescence both in visible light range (510-580 nm and 640-690 nm) and near infrared light range (1400-1700nm) have been observed. The photoluminescence excitation spectra demonstrate that energy transfer from wide band-gap TiO to Er ions causes the infrared light emission.

Plasmon-enhanced upconversion luminescence in pyrochlore phase Yb Er TiO thin film.

Pyrochlore phase Yb Er TiO (YETO) thin films have been prepared by employing a facile sol-gel method combining with spin-coating technique and post-annealing treatment at 700 °C. High concentration of Yb ions can promote the transformation from Yb/Er co-doped anatase phase TiO to pyrochlore phase YETO at 700 °C temperature. We find that the YETO thin film with 30 mol% Yb ions exhibits the brightest upconversion (UC) emission.

Modulation of surface states by phosphorus to improve the optical properties of ultra-small Si nanocrystals.

Here, we report the enhanced luminescence and optical gain by appropriate P-doping in Si nanocrystals (NCs)/SiO multilayers with ultra-small size of ∼1.9 nm. The luminescence intensity is enhanced by 19.

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers.

High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level on account of the changing P doping concentration. By controlling the P doping concentration in the films, the room temperature conductivity can be enhanced by seven orders of magnitude than the un-doped sample, reaching values up to 110 S/cm for heavily doped sample.

Arc-melting to narrow the bandgap of oxide semiconductors.

The bandgap of a series of oxide semiconductors is narrowed by a quick and facile arc-melting method. A defective structure is formed in the fast melting and cooling process without changing its phase structure. Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc-melted ZnO under visible light.