Locally Gated SnS/hBN Thin Film Transistors with a Broadband Photoresponse.

Next-generation flexible and transparent electronics demand newer materials with superior characteristics. Tin dichalcogenides, Sn(S,Se), are layered crystal materials that show promise for implementation in flexible electronics and optoelectronics. They have band gap energies that are dependent on their atomic layer number and selenium content.

Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS light absorbing layer.

We report an enhancement of near-infrared (NIR) detectability from amorphous InGaZnO (α-IGZO) thin film transistor in conjunction with randomly distributed molybdenum disulfide (MoS) flakes. The electrical characteristics of the α-IGZO grown by radio-frequency magnetron sputtering exhibit high effective mobility exceeding 15 cm V s and current on/off ratio up to 10. By taking advantages of the high quality α-IGZO and MoS light absorbing layer, photodetection spectra are able to extend from ultra-violet to NIR range.

Selective control of electron and hole tunneling in 2D assembly.

Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains.

Electrical and photovoltaic properties of residue-free MoS thin films by liquid exfoliation method.

Molybdenum disulfide (MoS) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and low-temperature processes. In this study, residue-free MoS thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS film thickness could be controlled by centrifuge condition in the range of 20 ∼ 40 nm, and its carrier concentration and mobility were measured at about 7.