Electronic structure, carrier mobility and strain modulation of CH (SiH, GeH) nanoribbons.

Using first-principles calculations coupled with deformation potential (DP) theory, we have systematically studied the band structure, carrier mobility and strain modulation of monolayer graphane (CH), silicane (SiH) and germanane (GeH) nanoribbons. It is found that all the CH (SiH, GeH) nanoribbons are semiconductor with a wide range of band gap. The carrier mobility results show that the armchair germanane nanoribbon (AGeNR) has the characteristic of p -type semiconductor in electrical conduction because its hole mobility is larger than the electron mobility.

Effect of sulphur vacancy and interlayer interaction on the electronic structure and spin splitting of bilayer MoS.

Molybdenum disulfide (MoS) is one of the candidate materials for nanoelectronics and optoelectronics devices in the future. The electronic and magnetic properties of MoS can be regulated by interlayer interaction and the vacancy effect. Nevertheless, the combined effect of these two factors on MoS is not clearly understood.