Ultrafast photocarrier dynamics related to defect states of SiGe nanowires measured by optical pump-THz probe spectroscopy.

Slightly tapered SiGe nanowires (NWs) (x = 0.29-0.84) were synthesized via a vapor-liquid-solid procedure using Au as a catalyst.

Controlling the defects and transition layer in SiO films grown on 4H-SiC via direct plasma-assisted oxidation.

The structural stability and electrical performance of SiO grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO film (thickness ~5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiOC) in the transition layer compared to that of conventionally grown (i.