Interferometric method for quantitatively testing the RadOptic effect in bulk semiconductors.

For the quantitative investigation of MeV-photon-induced changes in the refractive indices of bulk semiconductors, a model was established to describe the evolution of the excess carrier density, including the generation and recombination processes. The two key parameters of the evolution model, namely, the summed injection intensity and the gamma intensity curve, were obtained via dose measurements and gamma pulse monitoring, respectively. An interferometric method of measuring instantaneous changes in the refractive index and obtaining real-time measurements of the excess carrier density in bulk materials was successfully implemented.