Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode.

The experimental demonstrations of light-emitting diode (LED) fabrication with surface plasmon (SP) coupling with the radiating dipoles in its quantum wells are first reviewed. The SP coupling with a radiating dipole can create an alternative emission channel through SP radiation for enhancing the effective internal quantum efficiency when the intrinsic non-radiative recombination rate is high, reducing the external quantum efficiency droop effect at high current injection levels, and producing partially polarized LED output by inducing polarization-sensitive SP for coupling. Then, we report the theoretical and numerical study results of SP-dipole coupling based on a simple coupling model between a radiating dipole and the SP induced on a nearby Ag nanoparticle (NP).

A GaN photonic crystal membrane laser.

The implementation of a series of optically pumped GaN photonic crystal (PhC) membrane lasers is demonstrated at room temperature. The photonic crystal is composed of a scalene-triangular arrangement of circular holes in GaN. Three defect structures are fabricated for comparing their lasing characteristics with those of perfect PhC.

Localized surface plasmon-induced emission enhancement of a green light-emitting diode.

The output enhancement of a green InGaN/GaN quantum-well (QW) light-emitting diode (LED) through the coupling of a QW with localized surface plasmons (LSPs), which are generated on Ag nanostructures on the top of the device, is demonstrated. The suitable Ag nanostructures for generating LSPs of resonance energies around the LED wavelength are formed by controlling the Ag deposition thickness and the post-thermal-annealing condition. With a 20 mA current injected onto the LED, enhancements of up to 150% in electroluminescence peak intensity and of 120% in integrated intensity are observed.

Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well.

We demonstrate the variations of the photoluminescence (PL) spectral peak position and intensity through the surface plasmon (SP) coupling with an InGaN/GaN quantum well (QW) by forming Ag nanostructures of different scale sizes on the QW structure with thermal annealing. By transferring an Ag thin film into a nanoisland structure, we can not only enhance the PL intensity, but also adjust the SP dispersion relation and hence red-shift the effective QW emission wavelength. Such an emission spectrum control can be realized by initially coating Ag films of different thicknesses.