Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact.

Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect (BPVE) but with a low cell efficiency. Over the past few years, relatively larger BPVE coefficients have been reported for two-dimensional (2D) layers and stacks with asymmety-induced spontaneous polarization. Here, we report a crucial breakthrough in boosting the BPVE in 3R-MoS by adopting edge contact (EC) geometry using bismuth semimetal electrode.

Scalable production of ultraflat and ultraflexible diamond membrane.

Diamond is an exceptional material with great potential across various fields owing to its interesting properties. However, despite extensive efforts over the past decades, producing large quantities of desired ultrathin diamond membranes for widespread use remains challenging. Here we demonstrate that edge-exposed exfoliation using sticky tape is a simple, scalable and reliable method for producing ultrathin and transferable polycrystalline diamond membranes.

Coulomb Drag in Graphene/h-BN/Graphene Moiré Heterostructures.

We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (h-BN) moiré heterostructure with a moiré wavelength of ∼14  nm and an intrinsic graphene with a lattice constant of ∼0.25  nm. By tuning carrier densities of each graphene layer independently, we find that charge carriers in moiré minibands, i.

Accurate Layer-Number Determination of Hexagonal Boron Nitride Using Optical Characterization.

Precise determination of the layer number () of hexagonal boron nitride (hBN) is crucial for its integration with other layered materials in applications such as ferroelectric devices and moiré potential modulation. We present a nondestructive method to accurately identify , combining optical contrast analysis with second harmonic generation (SHG) measurements. By studying the flakes on 90 nm thick SiO/Si substrates, we demonstrate that red-filtered optical images provide a clear contrast step in with an uncertainty of ±1 layer, while SHG measurements further reduce the error by distinguishing even and odd layers.

Switchable Power Generation in Triboelectric Nanogenerator Toward Chip-Less Wearable Power Module Applications.

A conceptual shift toward next-generation wearable electronics is driving research into self-powered electronics technologies that can be independently operated without plugging into the grid for external power feeding. Triboelectric nanogenerators (TENGs) are emerging as a key component of self-powered electronics, but a power type mismatch between supply and demand limits their direct implementation into wearable self-powered electronics. Here, a TENG with switchable power mode capability is reported where the charge flow direction is modulated over the course of slow and random mechanical stimuli, with exceptional rectification capabilities as high as ≈133, stable outputs over the cycles, and design flexibility in different platforms.

Additive Manufacturing of Thermoelectric Microdevices for 4D Thermometry.

Thermometry, the process of measuring temperature, is one of the most fundamental tasks not only for understanding the thermodynamics of basic physical, chemical, and biological processes but also for thermal management of microelectronics. However, it is a challenge to acquire microscale temperature fields in both space and time. Here, a 3D printed micro-thermoelectric device that enables direct 4D (3D Space + Time) thermometry at the microscale is reported.

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility.

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs).

3D Nanoprinting of Perovskites.

As competing with the established silicon technology, organic-inorganic metal halide perovskites are continually gaining ground in optoelectronics due to their excellent material properties and low-cost production. The ability to have control over their shape, as well as composition and crystallinity, is indispensable for practical materialization. Many sophisticated nanofabrication methods have been devised to shape perovskites; however, they are still limited to in-plane, low-aspect-ratio, and simple forms.

A family of finite-temperature electronic phase transitions in graphene multilayers.

Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state whose origin remains to be understood. We show that a finite-temperature second-order phase transition occurs in multilayers whose critical temperature ( ) increases from 12 kelvins (K) in bilayers to 100 K in heptalayers. A comparison of the data with a phenomenological model inspired by a mean-field approach suggests that the transition is associated with the appearance of a self-consistent valley- and spin-dependent staggered potential that changes sign from one layer to the next, appearing at and increasing upon cooling.

Direct Observation of a Long-Range Field Effect from Gate Tuning of Nonlocal Conductivity.

We report the direct observation of a long-range field effect in WTe_{2} devices, leading to large gate-induced changes of transport through crystals much thicker than the electrostatic screening length. The phenomenon-which manifests itself very differently from the conventional field effect-originates from the nonlocal nature of transport in the devices that are thinner than the carrier mean free path. We reproduce theoretically the gate dependence of the measured classical and quantum magnetotransport, and show that the phenomenon is caused by the gate tuning of the bulk carrier mobility by changing the scattering at the surface.

Strong interface-induced spin-orbit interaction in graphene on WS2.

Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in graphene on hexagonal boron nitride substrates. Ongoing research strives to explore interfacial interactions with other materials to engineer targeted electronic properties. Here we show that with a tungsten disulfide (WS2) substrate, the strength of the spin-orbit interaction (SOI) in graphene is very strongly enhanced.

Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene.

Close to charge neutrality, the electronic properties of graphene and its multilayers are sensitive to electron-electron interactions. In bilayers, for instance, interactions are predicted to open a gap between valence and conduction bands, turning the system into an insulator. In mono and (Bernal-stacked) trilayers, which remain conducting at low temperature, interactions do not have equally drastic consequences.

Observation of even denominator fractional quantum Hall effect in suspended bilayer graphene.

We investigate low-temperature magneto-transport in recently developed, high-quality multiterminal suspended bilayer graphene devices, enabling the independent measurement of the longitudinal and transverse resistance. We observe clear signatures of the fractional quantum Hall effect with different states that are either fully developed, and exhibit a clear plateau in the transverse resistance with a concomitant dip in longitudinal resistance or incipient, and exhibit only a longitudinal resistance minimum. All observed states scale as a function of filling factor ν, as expected.

High-quality multiterminal suspended graphene devices.

We introduce a new scheme to realize suspended, multiterminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected directly to the part of graphene probed by transport measurements, but only through etched constriction, which prevents the contacts from acting invasively. The device high quality and uniformity is demonstrated by a reproducibly narrow (δn ~ 10(9) cm(-2)) resistance peak around charge neutrality, by carrier mobility values exceeding 10(6) cm(2) V(-1) s(-1), by the observation of integer quantum Hall plateaus starting at 30 mT and of symmetry broken states at about 200 mT, and by the occurrence of a negative multiterminal resistance directly proving the occurrence of ballistic transport.

Identification of a strong contamination source for graphene in vacuum systems.

To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum gauges. The effect-reversible upon exposing graphene to air-is significant, as doping rates can largely exceed 10(12) cm(-2) h(-1), depending on pressure and the relative position of the gauge and the graphene device.

Crossover from Coulomb blockade to quantum Hall effect in suspended graphene nanoribbons.

Suspended graphene nanoribbons formed during current annealing of suspended graphene flakes have been investigated experimentally. Transport measurements show the opening of a transport gap around charge neutrality due to the formation of "Coulomb islands", coexisting with quantum Hall conductance plateaus appearing at moderate values of the magnetic field B. Upon increasing B, the transport gap is rapidly suppressed, and is taken over by a much larger energy gap due to electronic correlations.

Ballistic transport of graphene pnp junctions with embedded local gates.

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously.