Electrical characteristics of metal oxide based multi-layer vertical resistive switching memories.

The electrical properties of vertical resistive switching random access memories (VRRAMs) were investigated to enhance their device performance by using a stochastic method based on the generation and the rupture probability of the conductive filaments (CFs) together with a tunneling model. The carrier transport mechanisms were dominantly attributed to the tunneling current between the CFs and the electrode. Carrier transport mechanisms of the high resistance state current were dominantly attributed to the direct tunneling current between the electrode and the CFs locating at nearest the electrode.