Publications by authors named "Dong Hwan Lim"

Article Synopsis
  • Previous studies faced challenges in measuring changes in high-pressure vessels due to sensor issues and gas desorption errors in polymer-gas mixtures.
  • A new device using magnetic sensors was developed to measure real-time gas-saturated polymer changes inside high-pressure vessels, specifically testing polymethyl methacrylate under varying temperatures and pressures.
  • The study proposes a new model for deflection in high-pressure environments and demonstrates that this method allows for accurate, in-situ measurement of polymer behavior, aiding in better control of high-pressure polymer processes.
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In this study, an acoustic emission (AE) sensor was fabricated using lead-free Ba(ZrTi)O-0.5(BaCa)TiO (BZT-BCT) ceramics. The acoustic and electromechanical properties of the AE sensor were determined by the shapes of the piezoelectric ceramics.

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The positive bias temperature instability (PBTI) characteristics of fully depleted silicon on insulator (FD-SOI) tunneling field effect transistor (TFET) are investigated in comparison with those of metal oxide semiconductor field effect transistor (MOSFET) fabricated with the same technology process. Unlike some of the previously reported studies, in which the PBTI lifetime of TFET is much longer than that of MOSFET, in this study, the PBTI lifetime of TFET is found to be shorter than that of MOSFET. This result is very interesting, because degradation of electrical parameters of TFET is mainly affected by local traps near the source junction rather than global traps in the channel region.

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In this paper, the dependency of low frequency noise as a function of the gate voltage was examined for tunneling field effect transistors (TFETs). When the level of gate voltage is low, the tunneling width of the TFETs is large. Thus, electrons move via the trap instead of tunneling directly.

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Blue fluorescent materials based on diphenylaminofluorenylstyryl derivatives connected with the various end-capping aromatic groups were synthesized and characterized. An OLED, using (E)-9,9-diethyl-7-(4-(4-fluoronaphthalen-1-yl)styryl)-N,N-diphenyl-9 H-fluoren-2-amine(5) in emitting layer, was fabricated. This device showed the highly efficient blue emission with the maximum luminance of 5138 cd/m2, the luminous efficiency of 3.

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We report an improvement of efficiency in blue phosphorescent organic light-emitting diodes (PHOLEDs) based on triple-emitting layer (T-EML) with mixed host (MH) system using a phosphorescent blue emitter: iridium(III)bis[(4,6-di-fluoropheny)-pyridinato-N,C2]picolinate (Flrpic) doped in N,N'-dicarbazolyl-3,5-benzene (mCP) of hole transport-type host material and 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) of electron transport-type host material. This T-EML device resulted in both an effective electron and hole balance and efficient distribution of the recombination zone. As a result, the property of T-EML device which demonstrated a maximum luminous efficiency of 24.

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We report an improvement of efficiency in red phosphorescent organic light-emitting diodes (PHOLEDs) based on a combination of heterojunction (HJ) structure and mixed host (MH) system using a phosphorescent red emitter: bis(2-phenylquinolinato)-acetylacetonate iridium III [Ir(pq)2(acac)] doped in 4,4,N,N'-dicarbazolebiphenyl (CBP) of hole transport type host material and 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) of electron transport type host material. This combination device resulted in an effective electron and hole balance and distribution of the recombination zone. Therefore, highly efficient red PHOLEDs with maximum luminous efficiency and external quantum efficiency of 21.

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The device performance of red organic light-emitting diodes (OLEDs) was dramatically improved by co-doping of the red fluorescent material of (2Z,2'Z)-3,3'-[4,4"-bis(dimethylamino)-1,1':4',1"-terphenyl-2',5'-diyl]-bis(2-phenylacrylonitrile) (ABCV-P) with the hole transport material of N'-bis-(1-naphyl)-N,N'-diphenyl-1,1 '-biphenyl-4,4'-diamine (NPB) and the electron transport material of bis(2-methyl-8-quninolinato)-4-phenylphenolate aluminum (BAlq). The device structures were ITO/NPB/emitting layers/BAlq/Liq/Al in which the emitting layers were MADN:ABCV-P (40%) (device A), MADN:ABCV-P (40%):NPB (10%) (device B), MADN:ABCV-P (40%):BAlq (10%) (device C) and MADN:ABCV-P (40%):NPB (10%):BAlq (10%) (device D), respectively. The device D co-doped with NPB and BAlq exhibited maximum luminance of 9784 cd/m2, maximum luminous efficiency of 2.

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To obtain a saturated blue phosphorescent material with a good color purity, we have synthesized the new blue emitting iridium complexes with 2, 6-difluoro-3-(4-methylpyridin-2-yl)pyridine (4-Me-dfpypy) as a main ligand. We expected that the LUMO energy levels of the complex might increase upon introduction of an electron donating group such as a methyl group to the pyridyl moieties of the ligand, leading to a wide energy gap of the complex to give the saturated blue emission. We have also introduced a variety of the ancillary ligands to the iridium center to compare the effect of the ancillary ligards on the emission of their complexes.

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We demonstrated efficient and stable white phosphorescent organic light-emitting diodes (OLEDs) with double-emitting layers (D-EMLs), which were comprised of two emissive layers with a hole transport-type host of N,N'-dicarbazolyl-3,5-benzene (mCP) and a electron transport-type host of 2,2',2"-(1,3,5-benzenetryl)tris(1-phenyl)-1H-benzimidazol (TPBi) with blue/orange emitters, respectively. We fabricated two type white devices with single emitting layer (S-EML) and D-EML of orange emitter, maintaining double recombination zone of blue emitter. In addition, the device architecture was developed to confine excitons inside the D-EMLs and to manage triplet excitons by controlling the charge injection.

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