Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors.

While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of the most promising materials. In this work, we discuss the radiation damage studies of a new, large area, p-n junction silicon carbide device developed by the SiCILIA collaboration.

Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector.

4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He in the fluence range of 5 × 10 ÷ 5 × 10 ion/cm in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were monitored in dark condition and in the UV (200 ÷ 400 nm) range, as well as in the visible region confirming the typical visible blindness of unirradiated and irradiated SiC photo-sensors. A decrease of UV optical responsivity occurred after irradiation and two fluence regimes were identified.

Risk of venous and arterial thromboembolic events in women with advanced breast cancer treated with CDK 4/6 inhibitors: A systematic review and meta-analysis.

Background: Cyclin-dependent kinase inhibitors (CDKIs) may increase the risk of thrombotic events of endocrine therapy (ET) in women with hormone-sensitive, HER2-negative advanced breast cancer (BC). Aim of our systematic review is the estimate of the risk of venous and arterial thromboembolism in women with advanced BC treated with CDKIs in phase III randomized controlled trials (RCTs).

Methods: Studies were identified by electronic search of MEDLINE, EMBASE and CENTRAL database until October 2021.

A rare mutation of thyroid hormone receptor beta gene in thyroid hormone resistance syndrome.

Summary: Resistance to thyroid hormone (RTH) is a rare hereditary syndrome with impaired sensitivity to thyroid hormones (TH) and reduced intracellular action of triiodothyronine (T3) caused by genetic variants of TH receptor beta (TRB) or alpha (TRA). RTH type beta (RTHβ) due to dominant negative variants in the TRB gene usually occurs with persistent elevation of circulating free TH, non-suppressed serum TSH levels responding to a thyrotropin-releasing hormone (TRH) test, an absence of typical symptoms of hyperthyroidism and goiter. Here, we present a rare variant in the TRB gene reported for the first time in an Italian patient with generalized RTHβ syndrome.

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p-n Junctions.

In this study, 4H-SiC p-n junctions were irradiated with 700 keV He ions in the fluence range 1.0 × 10 to 1.0 × 10 ions/cm.