We demonstrate low-temperature growth and direct transfer of graphene-graphitic carbon films (G-GC) onto plastic substrates without the use of supporting materials. In this approach, G-GC films were synthesized on copper layers by using inductively coupled plasma enhanced chemical vapor deposition, enabling the growth of few-layer graphene (G) on top of Cu and the additional growth of graphitic carbon (GC) films above the graphene layer at temperatures as low as 300 °C. The patterned G-GC films are not easily damaged or detached from the polymer substrates during the wet etching and transfer process because of the van der Waals forces and π-π interactions between the films and the substrates.
View Article and Find Full Text PDFThe first micrometer-sized graphene flakes extracted from graphite demonstrated outstanding electrical, mechanical and chemical properties, but they were too small for practical applications. However, the recent advances in graphene synthesis and transfer techniques have enabled various macroscopic applications such as transparent electrodes for touch screens and light-emitting diodes (LEDs) and thin-film transistors for flexible electronics in particular. With such exciting potential, a great deal of effort has been put towards producing larger size graphene in the hopes of industrializing graphene production.
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