Polydimethylsiloxane (PDMS) microfluidic devices with chaotic microfibrous channels were fabricated for the continuous production of lipid nanoparticles (LNPs). Electrospun poly(ε-caprolactone) (PCL) microfibrous matrices with different diameters (3.6 ± 0.
View Article and Find Full Text PDFCO -triggered in situ hydrogels is developed from waterborne poly(ε-caprolactone)-based polyurethane (PU) dispersion and aqueous polyethyleneimine (PEI) solution without any other chemicals and apparatus (e.g., UV light).
View Article and Find Full Text PDFA polydimethylsiloxane (PDMS) microfluidic chip with well-interconnected microfibrous channels was fabricated by using an electrospun poly(ε-caprolactone) (PCL) microfibrous matrix and 3D-printed pattern as templates. The microfiber-templated microfluidic chip (MTMC) was used to produce nanoscale emulsions and spheres through multiple emulsification at many small micro-orifice junctions among microfibrous channels. The emulsion formation mechanisms in the MTMC were the cross-junction dripping or Y-junction splitting at the micro-orifice junctions.
View Article and Find Full Text PDFScanning electron microscopy and energy-dispersive spectrometer images of hybrid nanocomposites of ZnO nanoparticles capped with a poly N-vinylcarbazole (PVK) that was fabricated using the spin-coating technique showed that the ZnO nanoparticles were capped with a PVK polymer layer. The measurement of the current-voltage (I-V) of the Al/ZnO nanoparticles capped with a PVK layer/indium-tin-oxide/glass devices at 300 K showed electrical bistability and negative differential resistance, which indicate the nonvolatile nature of the memory effect of the electron captured in the ZnO nanoparticles. The charging and discharging mechanisms of the organic bistable devices that were fabricated using hybrid nanocomposites of ZnO nanoparticles capped with a PVK layer are described based on the I-V results.
View Article and Find Full Text PDFZnO nanoparticles embedded in a Si3N4 layer by using spin-coating and thermal treatment were fabricated to investigate the feasible applications in charge trapping regions of the metal/oxide/nitride/oxide/p-Si memory devices. The magnitude of the flatband voltage shift of the capacitance-voltage (C-V) curve for the Al/SiO2/ZnO nanoparticles embedded in Si3N4 layer/SiO2/p-Si memory device was larger than that of Al/ZnO nanoparticles embedded in SiO2 layer/p-Si and Al/SiO2/Si3N4/SiO2/p-Si devices. The increase in the flatband voltage shift of the C-V curve for the Al/SiO2/ZnO nanoparticles embedded in Si3N4 layer/SiO2/p-Si memory device in comparison with other devices was attributed to the existence of the ZnO nanoparticles or the interface trap states between the ZnO nanoparticles and the Si3N4 layer resulting from existence of ZnO nanoparticles embedded in the Si3N4 layer.
View Article and Find Full Text PDFWe investigated the formation of nanoparticles in a relatively thick polyimide (PI) film (> 1 microm) in controlled atmospheres and optical properties of these nanoparticles. Polyamic acid of 10 wt% BPDA-PDA was spin-coated on the 25 nm Cu thin film and thermally cured at 350 degrees C in high purity nitrogen or 5% H2 + 95% N2 atmosphere. The fabricated nanoparticles in high purity nitrogen atmosphere had spherical shape and were dispersed in the 1.
View Article and Find Full Text PDFZnO nanoparticles were formed on p-Si and Al2O3 substrates by using spin coating and thermal treatment method. Scanning electron microscopy images and X-ray energy dispersive spectrometry profiles showed that ZnO nanoparticles were formed on p-Si and Al2O3 substrates. X-ray diffraction patterns showed that ZnO nanoparticles formed on the p-Si substrates had polycrystalline hexagonal wurtzite structures and that those formed on the Al2O3 substrates had a c-axis preferential orientation.
View Article and Find Full Text PDF