Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation: First-Principles Study.

One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene and zinc oxide (ZnO) 2D monolayers.

Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study.

At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures.

2D Molybdenum Carbide MXenes for Enhanced Selective Detection of Humidity in Air.

2D transition metal carbides and nitrides (MXenes) open up novel opportunities in gas sensing with high sensitivity at room temperature. Herein, 2D Mo CT flakes with high aspect ratio are successfully synthesized. The chemiresistive effect in a sub-µm MXene multilayer for different organic vapors and humidity at 10 -10  ppm in dry air is studied.

Thin Graphene-Nanotube Films for Electronic and Photovoltaic Devices: DFTB Modeling.

Supercell atomic models of composite films on the basis of graphene and single-wall carbon nanotubes (SWCNTs) with an irregular arrangement of SWCNTs were built. It is revealed that composite films of this type have a semiconducting type of conductivity and are characterized by the presence of an energy gap of 0.43-0.