Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation.

350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from ∼82 to ∼38 MeV) of xenon (Xe) ions and different fluences of 1.2 GeV lead (Pb) ions, respectively. The radiation effects of the swift heavy ions' (SHIs) bombardment were investigated using Rutherford Backscattering Spectrometry in Channeling mode (RBS/C), X-Ray Diffraction (XRD), and micro-Raman spectroscopy.