Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes.

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations.

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium titanate has stalled due to process challenges. The recent discovery of ferroelectricity in scandium-doped aluminum nitride (AlScN) presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approximately 350 °C), making it compatible with back end of the line integration on silicon logic.

A Multi-Beam Shared-Inductor Reconfigurable Voltage/SECE Mode Piezoelectric Energy Harvesting Interface Circuit.

This paper presents an autonomous multi-input (multi-beam) reconfigurable power-management chip for optimal energy harvesting from weak multi-axial human motion using a multi-beam piezoelectric energy harvester (PEH). The proposed chip adaptively operates in either voltage-mode or synchronous-electrical-charge-extraction-mode (VM-SECE) to improve overall efficiency, extract maximum energy regardless of the PEH beams' impedance/voltage/frequency variations, and protect the chip against large inputs, eliminating the need for high-voltage processes. It can simultaneously harvest energy from up to 6 beams using only one shared off-chip inductor.