Publications by authors named "Divya Somvanshi"
Article Synopsis
- The semiconductor industry is shifting to the 'More Moore' era, focusing on 3D integration to overcome the limitations of traditional 2D scaling in circuit design.
- Innovations like monolithic 3D integration (M3D) offer potential improvements, but face challenges such as thermal processing issues that may impact performance.
- Recent advancements include integrating two-dimensional materials, specifically WSe FETs, to achieve dense connections and implement vertical logic gates, showcasing progress in M3D integration for better circuit efficiency.
Improved Current Density and Contact Resistance in Bilayer MoSe Field Effect Transistors by AlO Capping.
ACS Appl Mater Interfaces
August 2020
Atomically thin semiconductors are of interest for future electronics applications, and much attention has been given to monolayer (1L) sulfides, such as MoS, grown by chemical vapor deposition (CVD). However, reports on the electrical properties of CVD-grown selenides, and MoSe in particular, are scarce. Here, we compare the electrical properties of 1L and bilayer (2L) MoSe grown by CVD and capped by sub-stoichiometric AlO.
View Article and Find Full Text PDFThe use of multilayer semiconductor heterojunction structures has shown promise in infrared detector applications. Several heterostructures with innovative compositional and architectural designs have been displayed on emerging infrared technologies. In this review, we aim to illustrate the principles of heterostructure detectors for infrared detection and explore the recent progress on the development of detectors with the split-off band and threshold wavelength extension mechanism.
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