Control over MoSe formation with vacuum-assisted selenization of one-step electrodeposited Cu-In-Ga-Se precursor layers.

Cu(In,Ga)Se (CIGS) absorbers are prepared by direct current electrodeposition process followed by selenization of precursors. Selenization of electrodeposited layers is performed in a tubular furnace at 550 °C in elemental selenium atmosphere using Ar as carrier gas. The effect of evacuation of tube prior to the selenization on the formation of CIGS absorbers is studied.