Publications by authors named "Dinusha Herath Mudiyanselage"
Article Synopsis
- Beta-phase gallium oxide (β-GaO) is a powerful ultrawide bandgap semiconductor, ideal for advanced power electronics and ultraviolet optoelectronics, due to its high bandgap energy and critical electric field strength.
- The review discusses recent advances in growth techniques for β-GaO, such as Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition, focusing on achieving high growth rates and low defect densities.
- It emphasizes the need for understanding growth processes to improve manufacturing of high-quality epitaxial structures, serving as a vital resource for engineers and researchers in the field.
Wide bandgap semiconductors such as gallium oxide (GaO) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal GaO substrates can be routinely grown from melt along various orientations, the influence of such orientations has been seldom reported. Further, making rectifying p-n diodes from GaO has been difficult due to lack of p-type doping.
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