Effect of Joule Heating on Resistive Switching Characteristic in AlO Cells Made by Thermal Oxidation Formation.

The AlO-based resistive switching memory device is fabricated by an oxidation diffusion process that involves depositing an Al film on an ITO substrate and annealing at 400 °C in a vacuum. An AlO interface layer with a thickness of ~ 20 nm is formed as a resistance switching layer. Bipolar and unipolar resistive switching (RS) behaviours are obtained when the compliance current is limited (≥ 1 mA).

Hybrid channel induced forming-free performance in nanocrystalline-Si:H/a-SiNx:H resistive switching memory.

The unique forming-free feature of Si-based resistive switching memory plays a key role in the industrialization of next generation memory in the nanoscale. Here we report on a new forming-free nanocrystalline-Si:H (nc-Si:H)/SiN:H resistive switching memory that can be obtained by deposition of hydrogen diluted nc-Si on hydrogen plasma treated a-SiN:H layer. It is found that nc-Si dots with areal density of 5.

Presetting conductive pathway induced the switching uniformity evolution of a-SiN:H resistive switching memory.

Si-based resistive random access memory (RRAM) devices at the nanoscale with high uniformity have great potential applications in the future. We demonstrate that the uniformity evolution of the a-SiN:H RRAM at the low resistance state (LRS) and the high resistance state (HRS) can be clearly monitored by presetting a Si dangling bond (Si-DB) conductive pathway through thermal energy. It is found that the increased magnitude of uniformity for the LRS and the HRS are determined by the number of preset Si-DBs, which can be controlled by tuning thermal energy.