Synthesis of Size-Tunable Indium Nitride Nanocrystals.

Indium nitride (InN) is an air stable III-V semiconductor with a small band gap of 0.7 eV and as such is of interest as a key material in near-infrared (NIR) LEDs, photodetectors, and multijunction solar cells. Conventionally, InN has been synthesized through physical deposition techniques which involve extreme temperatures and harsh conditions and yield nonluminescent materials.