Sputtered 1-FePd and its Synthetic Antiferromagnet on Si/SiO Wafers for Scalable Spintronics.

As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), 1-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing 1-FePd thin films on Si/SiO wafers is still unmet. In this paper, we prepare high-quality 1-FePd and its SAF on Si/SiO wafers by coating the amorphous SiO surface with an MgO(001) seed layer.

Low Gilbert damping and high thermal stability of Ru-seeded L1-phase FePd perpendicular magnetic thin films at elevated temperatures.

Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films seeded by a Ru layer. An -phase Ru layer induces the highly-ordered L1-phase FePd thin films with perpendicular magnetic anisotropy ( ~ 10.