Equation of state for He bubbles in W and model of He bubble growth and bursting near W{100} surfaces derived from molecular dynamics simulations.

Molecular dynamics (MD) simulations are performed to derive an equation of state (EOS) for helium (He) bubbles in tungsten (W) and to study the growth of He bubbles under a W(100) surface until they burst. We study the growth as a function of the initial nucleation depth of the bubbles. During growth, successive loop-punching events are observed, accompanied by shifts in the depth of the bubble towards the surface.

Molecular-Dynamics Analysis of the Mechanical Behavior of Plasma-Facing Tungsten.

We report a systematic computational analysis of the mechanical behavior of plasma-facing component (PFC) tungsten focusing on the impact of void and helium (He) bubble defects on the mechanical response beyond the elastic regime. Specifically, we explore the effects of porosity and He atomic fraction on the mechanical properties and structural response of PFC tungsten, at varying temperature and bubble size. We find that the Young modulus of defective tungsten undergoes substantial softening that follows an exponential scaling relation as a function of matrix porosity and He atomic content.

Effect of helium flux on near-surface helium accumulation in plasma-exposed tungsten.

We report results of object kinetic Monte Carlo (OKMC) simulations to understand the effect of helium flux on the near-surface helium accumulation in plasma-facing tungsten, which is initially pristine, defect-free, and has a (100) surface orientation. These OKMC simulations are performed at 933 K for fluxes ranging from 10to 4 × 10He/m s with 100 eV helium atoms impinging on a (100) surface up to a maximum fluence of 4 × 10He/m. In the near-surface region, helium clusters interact elastically with the free surface.

Elastic Properties of Plasma-Exposed Tungsten Predicted by Molecular-Dynamics Simulations.

We report results of systematic molecular-dynamics computations of the elastic properties of single-crystalline tungsten containing structural defects, voids and overpressurized He nanobubbles, related to plasma exposure of tungsten serving as a plasma-facing component (PFC) in nuclear fusion devices. Our computations reveal that the empty voids are centers of dilatation resulting in the development of tensile stress in the tungsten matrix, whereas He-filled voids (nanobubbles) introduce compressive stress in the plasma-exposed tungsten. We find that the dependence of the elastic moduli of plasma-exposed tungsten, namely, the bulk, Young, and shear modulus, on its void fraction follows a universal exponential scaling relation.

Theoretical Model of Helium Bubble Growth and Density in Plasma-Facing Metals.

We present a theoretically-motivated model of helium bubble density as a function of volume for high-pressure helium bubbles in plasma-facing tungsten. The model is a good match to the empirical correlation we published previously [Hammond et al., Acta Mater.

Formation and Mechanical Behavior of Nanocomposite Superstructures from Interlayer Bonding in Twisted Bilayer Graphene.

We report a comprehensive study on the design of two-dimensional graphene-diamond nanocomposite superstructures formed through interlayer covalent bonding of twisted bilayer graphene with commensurate bilayers. The interlayer bonding is induced by patterned hydrogenation that leads to the formation of superlattices of two-dimensional nanodiamond domains embedded between the two graphene layers. We generalize a rigorous algorithm for the formation of all possible classes of these superstructures: the structural parameters employed to design such carbon nanocomposites include the commensurate bilayer's twist angle, the stacking type of the nanodomains where the interlayer bonds are formed, the interlayer bond pattern, and the interlayer C-C bond density that is proportional to the concentration of sp-hybridized interlayer-bonded C atoms.

Multiscale Shear-Lag Analysis of Stiffness Enhancement in Polymer-Graphene Nanocomposites.

Graphene and other two-dimensional (2D) materials are of emerging interest as functional fillers in polymer-matrix composites. In this study, we present a multiscale atomistic-to-continuum approach for modeling interfacial stress transfer in graphene-high-density polyethylene (HDPE) nanocomposites. Via detailed characterization of atomic-level stress profiles in submicron graphene fillers, we develop a modified shear-lag model for short fillers.

A Comparison of the Elastic Properties of Graphene- and Fullerene-Reinforced Polymer Composites: The Role of Filler Morphology and Size.

Nanoscale carbon-based fillers are known to significantly alter the mechanical and electrical properties of polymers even at relatively low loadings. We report results from extensive molecular-dynamics simulations of mechanical testing of model polymer (high-density polyethylene) nanocomposites reinforced by nanocarbon fillers consisting of graphene flakes and fullerenes. By systematically varying filler concentration, morphology, and size, we identify clear trends in composite stiffness with reinforcement.

Helium segregation on surfaces of plasma-exposed tungsten.

We report a hierarchical multi-scale modeling study of implanted helium segregation on surfaces of tungsten, considered as a plasma facing component in nuclear fusion reactors. We employ a hierarchy of atomic-scale simulations based on a reliable interatomic interaction potential, including molecular-statics simulations to understand the origin of helium surface segregation, targeted molecular-dynamics (MD) simulations of near-surface cluster reactions, and large-scale MD simulations of implanted helium evolution in plasma-exposed tungsten. We find that small, mobile He n (1⩽  n  ⩽  7) clusters in the near-surface region are attracted to the surface due to an elastic interaction force that provides the thermodynamic driving force for surface segregation.

Equilibrium Shape of Colloidal Crystals.

Assembling colloidal particles into highly ordered configurations, such as photonic crystals, has significant potential for enabling a broad range of new technologies. Facilitating the nucleation of colloidal crystals and developing successful crystal growth strategies require a fundamental understanding of the equilibrium structure and morphology of small colloidal assemblies. Here, we report the results of a novel computational approach to determine the equilibrium shape of assemblies of colloidal particles that interact via an experimentally validated pair potential.

Phase behavior of the 38-atom Lennard-Jones cluster.

We have developed a coarse-grained description of the phase behavior of the isolated 38-atom Lennard-Jones cluster (LJ38). The model captures both the solid-solid polymorphic transitions at low temperatures and the complex cluster breakup and melting transitions at higher temperatures. For this coarse model development, we employ the manifold learning technique of diffusion mapping.

Colloidal cluster crystallization dynamics.

The crystallization dynamics of a colloidal cluster is modeled using a low-dimensional Smoluchowski equation. Diffusion mapping shows that two order parameters are required to describe the dynamics. Using order parameters as metrics for condensation and crystallinity, free energy, and diffusivity landscapes are extracted from brownian dynamics simulations using bayesian inference.

Equilibrium compositional distribution in freestanding ternary semiconductor quantum dots: the case of In(x)Ga(1-x)As.

We report the findings of a systematic computational study that addresses the effects of surface segregation on the atomic distribution at equilibrium of constituent group-III atoms in freestanding ternary semiconductor In(x)Ga(1-x)As nanocrystals. Our analysis is based on density functional theory calculations in conjunction with Monte Carlo simulations of the freestanding nanocrystals using a DFT-re-parameterized valence force field description of interatomic interactions. We have determined the equilibrium concentration profiles as a function of nanocrystal size (d), composition (x), and temperature (T).

A Smoluchowski model of crystallization dynamics of small colloidal clusters.

We investigate the dynamics of colloidal crystallization in a 32-particle system at a fixed value of interparticle depletion attraction that produces coexisting fluid and solid phases. Free energy landscapes (FELs) and diffusivity landscapes (DLs) are obtained as coefficients of 1D Smoluchowski equations using as order parameters either the radius of gyration or the average crystallinity. FELs and DLs are estimated by fitting the Smoluchowski equations to Brownian dynamics (BD) simulations using either linear fits to locally initiated trajectories or global fits to unbiased trajectories using Bayesian inference.

Fokker-Planck analysis of separation dependent potentials and diffusion coefficients in simulated microscopy experiments.

Total internal reflection microscopy (TIRM) and video microscopy (VM) are methods for nonintrusively measuring weak colloidal interactions important to many existing and emerging applications. Existing analyses of TIRM measured single particle trajectories can be used to extract particle-surface potentials and average particle diffusion coefficients. Here we develop a Fokker-Planck (FP) formalism to simultaneously extract both particle-surface interaction potentials and position dependent diffusion coefficients.

Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films.

Based on an atomically detailed surface growth model, we have performed kinetic Monte Carlo (KMC) simulations to determine the surface chemical composition of plasma deposited hydrogenated amorphous silicon (a-Si:H) thin films as a function of substrate temperature. Our surface growth kinetic model consists of a combination of various surface rate processes, including silyl (SiH(3)) radical chemisorption onto surface dangling bonds or insertion into Si-Si surface bonds, SiH(3) physisorption, SiH(3) surface diffusion, abstraction of surface H by SiH(3) radicals, surface hydride dissociation reactions, as well as desorption of SiH(3), SiH(4), and Si(2)H(6) species into the gas phase. Transition rates for the adsorption, surface reaction and diffusion, and desorption processes accounted for in the KMC simulations are based on first-principles density-functional-theory computations of the corresponding optimal pathways on the H-terminated Si(001)-(2x1) surface.

Coarse molecular-dynamics analysis of an order-to-disorder transformation of a krypton monolayer on graphite.

The thermally induced order-to-disorder transition of a monolayer of krypton (Kr) atoms adsorbed on a graphite surface is studied based on a coarse molecular-dynamics (CMD) approach for the bracketing and location of the transition onset. A planar order parameter is identified as a coarse variable, psi, that can describe the macroscopic state of the system. Implementation of the CMD method enables the construction of the underlying effective free-energy landscapes from which the transition temperature, T(t), is predicted.

Current-induced stabilization of surface morphology in stressed solids.

We examine the surface morphological evolution of a conducting crystalline solid under the simultaneous action of an electric field and mechanical stress based on a fully nonlinear model and combining linear stability theory with self-consistent dynamical simulations. We demonstrate that electric current, through surface electromigration, can stabilize the surface morphology of the stressed solid against cracklike surface instabilities. The results also have more general implications for the morphological response of solid surfaces under the simultaneous action of multiple external forces.

Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films.

We report results from a detailed analysis of the fundamental silicon hydride dissociation processes on silicon surfaces and discuss their implications for the surface chemical composition of plasma-deposited hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of hydride dissociation on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of adsorbed SiH(3) radical precursor dissociation on surfaces of MD-grown a-Si:H films. Our DFT calculations reveal that, in the presence of fivefold coordinated surface Si atoms, surface trihydride species dissociate sequentially to form surface dihydrides and surface monohydrides via thermally activated pathways with reaction barriers of 0.

Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces.

We present a detailed analysis of the interactions between growth precursors, SiH3 radicals, on surfaces of silicon thin films. The analysis is based on a synergistic combination of density functional theory calculations on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of film growth on surfaces of MD-generated hydrogenated amorphous silicon (a-Si:H) thin films. In particular, the authors find that two interacting growth precursors may either form disilane (Si2H6) and desorb from the surface, or disproportionate, resulting in the formation of a surface dihydride (adsorbed SiH2 species) and gas-phase silane (SiH4).

First-principles theoretical analysis of silyl radical diffusion on silicon surfaces.

We report results from a detailed analysis of the fundamental radical precursor diffusion processes on silicon surfaces and discuss their implications for the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of SiH(3) radical migration on the hydrogen-terminated Si(001)-(2 x 1) surface with molecular-dynamics (MD) simulations of SiH(3) radical precursor migration on surfaces of a-Si:H films. Our DFT calculations yield activation energies for SiH(3) migration that range from 0.

Surface smoothening mechanism of amorphous silicon thin films.

An important concern in the deposition of thin hydrogenated amorphous silicon () films is to obtain smooth surfaces. Herein, we combine molecular-dynamics simulations with first-principles density functional theory calculations to elucidate the smoothening mechanism of plasma deposited thin films. We show that the deposition precursor may diffuse rapidly on the film surface via overcoordinated surface Si atoms and incorporate into the film preferentially in surface valleys, with activation barriers for incorporation dependent on the local surface morphology.

Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films.

Hydrogen abstraction by growth precursors is the dominant process responsible for reducing the hydrogen content of amorphous silicon thin films grown from SiH(4) discharges at low temperatures. Besides direct (Eley-Rideal) abstraction, gas-phase radicals may first adsorb on the growth surface and abstract hydrogen in a subsequent process, giving rise to thermally activated precursor-mediated (PM) and Langmuir-Hinshelwood (LH) abstraction mechanisms. Using results of first-principles density functional theory (DFT) calculations on the interaction of SiH(3) radicals with the hydrogen-terminated Si(001)-(2x1) surface, we show that precursor-mediated abstraction mechanisms can be described by a chemisorbed SiH(3) radical hopping between overcoordinated surface Si atoms while being weakly bonded to the surface before encountering a favorable site for hydrogen abstraction.

Mechanism of hydrogen-induced crystallization of amorphous silicon.

Hydrogenated amorphous and nanocrystalline silicon films manufactured by plasma deposition techniques are used widely in electronic and optoelectronic devices. The crystalline fraction and grain size of these films determines electronic and optical properties; the nanocrystal nucleation mechanism, which dictates the final film structure, is governed by the interactions between the hydrogen atoms of the plasma and the solid silicon matrix. Fundamental understanding of these interactions is important for optimizing the film structure and properties.