Strong third-order nonlinearity in amorphous silicon carbide waveguides.

Silicon carbide (SiC) photonic integrated platform has attracted significant research interest for on-chip optical applications, owing to its exceptional optical properties such as a broad transparency window, high refractive index, and strong nonlinearity. Among the various types of SiC, amorphous SiC (a-SiC) has particularly emerged as an accessible choice for forming thin-film SiC-on-insulator (SiCOI) stacks, demonstrating promising capabilities for wafer-scale photonic applications. In this work, we prepare three a-SiCOI samples using the plasma-enhanced chemical vapor deposition, with different refractive indices.

Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices.

Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.

Novel Photonic Applications of Silicon Carbide.

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.

A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy.

Nitrogen doping of 4H-SiC during vapor phase epitaxy is still lacking of a general model explaining the apparently contradictory trends obtained by different teams. In this paper, the evolutions of nitrogen incorporation (on both polar Si and C faces) as a function of the main growth parameters (C/Si ratio, temperature, pressure and growth rate) are reviewed and explained using a model based on surface exchanges between the gas phase and the uppermost 4H-SiC atomic layers. In this model, N incorporation is driven mainly by the transient formation of C vacancies, due to H etching, at the surface or near the surface.