High power narrow linewidth discrete mode laser diode integrated with a curved semiconductor optical amplifier emitting at 2051 nm.

We report on a 2.051 μm InGaAs/InP-based discrete mode laser diode monolithically integrated with a curved tapered semiconductor optical amplifier for CO sensing applications. At a heat-sink temperature of 0°C, the laser emits a record InP value of more than 35 mW continuous-wave output power in a single longitudinal mode.

All-optical switching with a dual-state, single-section quantum dot laser via optical injection.

An all-optical switching mechanism via optical injection of an InAs/GaAs quantum dot laser is presented. Relative state suppression in excess of 40 dB is achieved, and experimental switching times of the order of a few hundred picoseconds are demonstrated.

Wide temperature range 0 < T < 85 °C narrow linewidth discrete mode laser diodes for coherent communications applications.

Cost effective lasers meeting the linewidth requirements for coherent communication systems are a key element in reducing the overall cost of future coherent systems. We report on monolithic devices with linewidths as low as 138 kHz which operate in a narrow linewidth, single wavelength mode with high sidemode suppression ratio over a wide temperature tuning range of -10 °C < T < 110 °C. A linewidth variation of only 23 kHz was measured at a constant emitted power of 4 mW as the device temperature is varied in the range 0 °C < T < 85 °C.