New materials for achieving direct electric field control of ferromagnetism and resistance behavior are highly desirable in the development of multifunctional data storage devices. In this paper, HfO nanoporous films have been fabricated on porous anodic alumina (PAA) substrates by DC-reactive magnetron sputtering. Electrically induced resistive switching (RS) and modulated room temperature ferromagnetism are simultaneously found in a Ag/HfO/PAA/Al (Ag/HP/Al) heterostructure.
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