Synthesis of High Sn Content GeSiSn (0.1 < < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications.

A systematic effort has been described to grow ternary GeSiSn semiconductors on silicon with high Sn concentrations spanning the 9.5-21.2% range.

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries.

We report a versatile chemical vapor deposition (CVD) method to dope Ge films with Ga atoms in situ over a wide concentration range spanning from 3 × 10 to 2.7 × 10 cm. The method introduces a stable and volatile Ga hydride [DGaN(CH)] that reacts readily with GeH to deliver Ga dopants controllably and systematically at complementary metal-oxide-semiconductor compatible ultralow temperatures of ∼360 °C.