The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates nonvolatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL)-compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE diodes scaled to 5, 10, and 20 nm FE AlScN/AlScN films.
View Article and Find Full Text PDFFerroelectric materials exhibiting switchable and spontaneous polarization have strong potential to be utilized in various novel electronic devices. Solid solutions of different perovskite structures induce the coexistence of various phases and enhance the physical functionalities around the phase coexistence region. The construction of phase diagrams is important as they describe the material properties, which are linked to the underpinning physics determining the system.
View Article and Find Full Text PDFLithium-sulfur (Li-S) batteries have attracted considerable interest as next-generation high-density energy storage devices. However, their practical applications are limited by rapid capacity fading when cycling cells with high mass loading levels. This could be largely attributed to the inferior electron/ion conduction and the severe shuttling effect of soluble polysulfide species.
View Article and Find Full Text PDFMultiferroic composites are promising candidates for magnetic field sensors, next-generation low power memory and spintronic devices, as they exhibit much higher magnetoelectric (ME) coupling and coupled ordering parameters compared to the single-phase multiferroics. Hence, the 3-0 type particulate multiferroic composites having general formula (1 - Φ)[PbFeNbO]-Φ[CoZnFeMnO] (Φ = 0.0, 0.
View Article and Find Full Text PDFOne of the ways to mitigate the world energy crisis is to harvest clean and green energy from waste-heat, which is abundant, ubiquitous, and free. Energy harvesting of this waste-heat is one of the most encouraging methods to capture freely accessible electrical energy. Ferroelectric materials can be used to harvest energy for low power electronic devices, as they exhibit switchable polarization, excellent piezoelectric and pyroelectric properties.
View Article and Find Full Text PDFNanomaterials (Basel)
October 2020
Multiferroic (MF)-magnetoelectric (ME) composites, which integrate magnetic and ferroelectric materials, exhibit a higher operational temperature (above room temperature) and superior (several orders of magnitude) ME coupling when compared to single-phase multiferroic materials. Room temperature control and the switching of magnetic properties via an electric field and electrical properties by a magnetic field has motivated research towards the goal of realizing ultralow power and multifunctional nano (micro) electronic devices. Here, some of the leading applications for magnetoelectric composites are reviewed, and the mechanisms and nature of ME coupling in artificial composite systems are discussed.
View Article and Find Full Text PDFWe grew lead-free BaZrTiO (BZT)/BaCaTiO (BCT) epitaxial heterostructures and studied their structural, dielectric, ferroelectric and energy density characteristics. The BZT/BCT epitaxial heterostructures were grown on SrRuO (SRO) buffered SrTiO (STO) single crystal substrate by optimized pulsed laser deposition (PLD) technique. These high-quality nanostructures exhibit high dielectric permittivity (∼1300), slim electric field-dependent polarization (P-E) curve with high saturation polarization (∼100 µC/cm) and low remnant polarization (∼20 µC/cm) through interface engineering to develop new lead-free ferroelectric system for energy storage devices.
View Article and Find Full Text PDFWe have studied the atomic force microscopy (AFM), X-ray Bragg reflections, X-ray absorption spectra (XAS) of the Pd L-edge, Scanning electron microscopey (SEM) and Raman spectra, and direct magnetoelectric tensor of Pd-substituted lead titanate and lead zirconate-titanate. A primary aim is to determine the percentage of Pd and Pd substitutional at the Ti-sites (we find that it is almost fully substitutional). The atomic force microscopy data uniquely reveal a surprise: both threefold vertical (polarized out-of-plane) and fourfold in-plane domain vertices.
View Article and Find Full Text PDFPiezoelectric and other physical properties are significantly enhanced at (or near) a morphotropic phase boundary (MPB) in ferroelectrics. MPB materials have attracted significant attention owing to both fundamental physics as well as the possibility of well-regulated energy and information storage devices which are dominated by lead (Pb)-based materials. Here, we report the crystal structure, Raman spectra, dielectric constant and polarization near the MPB of lead free (1 - x) NaBiTiO - x BaTiO (0.
View Article and Find Full Text PDFMultiferroic materials have attracted considerable attention as possible candidates for a wide variety of future microelectronic and memory devices, although robust magnetoelectric (ME) coupling between electric and magnetic orders at room temperature still remains difficult to achieve. In order to obtain robust ME coupling at room temperature, we studied the Pb(FeNb)O/NiZnFeO/Pb(FeNb)O (PFN/NZFO/PFN) trilayer structure as a representative FE/FM/FE system. We report the ferroelectric, magnetic and ME properties of PFN/NZFO/PFN trilayer nanoscale heterostructure having dimensions 70/20/70 nm, at room temperature.
View Article and Find Full Text PDFMultiferroic composite structures, i.e., composites of magnetostrictive and piezoelectric materials, can be envisioned to achieve the goal of strong room-temperature ME coupling for real practical device applications.
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