Defective Graphene/Plasmonic Nanoparticle Hybrids for Surface-Enhanced Raman Scattering Sensors.

Two-dimensional-zero-dimensional plasmonic hybrids involving defective graphene and transition metals (DGR-TM) have drawn significant interest due to their near-field plasmonic effects in the wide range of the UV-vis-NIR spectrum. In the present work, we carried out extensive investigations on resonance Raman spectroscopy (RRS) and localized surface plasmon resonance (LSPR) from the various DGR-TM hybrids (Au, Ag, and Cu) using micro-Raman, spatial Raman mapping analysis, high-resolution transmission electron microscopy (HRTEM), and LSPR absorption measurements on defective CVD graphene layers. Further, electric field (E) mappings of samples were calculated using the finite domain time difference (FDTD) method to support the experimental findings.

Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation.

We report on the appearance of a strong persistent photoconductivity (PPC) and conductor-like behaviour in zinc tin oxide (ZTO) thinfilm phototransistors. The active ZTO channel layer was prepared by remote plasma reactive sputtering and possesses an amorphous structure. Under sub-bandgap excitation of ZTO with UV light, the photocurrent reaches as high as ~ 10 A (a photo-to-dark current ratio of ~ 10) and remains close to this high value after switching off the light.

Strain dependence of the nonlinear optical properties of strained Si nanoparticles.

We report on the lattice strain dependence of the nonlinear optical (NLO) parameters of strained Si nanoparticles (NPs), which are prepared in a controlled way by a mechanical ball milling process. X-ray diffraction analysis shows that the nature of strain is compressive and is primarily caused by milling-induced lattice dislocations, which is further supported by high-resolution transmission electron microscopy imaging. It is found that the nonlinear refractive index (n₂) and nonlinear absorption coefficient (β) are strongly influenced by the associated lattice strain present in Si NPs.

Europium doping induced symmetry deviation and its impact on the second harmonic generation of doped ZnO nanowires.

In this work, we investigated the effects of europium doping on the second harmonic generation (SHG) of ZnO nanowires (NWs). A non-monotonic enhancement in the SHG is observed with the increase of the europium concentration. Maximum SHG is observed from the 1 at.

Graphene-assisted controlled growth of highly aligned ZnO nanorods and nanoribbons: growth mechanism and photoluminescence properties.

We demonstrate graphene-assisted controlled fabrication of various ZnO 1D nanostructures on the SiO2/graphene substrate at a low temperature (540 °C) and elucidate the growth mechanism. Monolayer and a few layer graphene prepared by chemical vapor deposition (CVD) and subsequently coated with a thin Au layer followed by rapid thermal annealing is shown to result in highly aligned wurtzite ZnO nanorods (NRs) with clear hexagonal facets. On the other hand, direct growth on CVD graphene without a Au catalyst layer resulted in a randomly oriented growth of dense ZnO nanoribbons (NRBs).

Size dependent anisotropic strain and optical properties of strained Si nanocrystals.

We report on the growth of strained Si nanocrystals (NCs) of sizes in the range 5-43 nm and analyze the detailed nature of strain and its influence on the optical properties of the NCs as a function of size. Freestanding Si NPs were prepared in a controlled way using a contamination free mechanical ball milling for duration 2-40 hrs. Structural analysis based on X-ray diffraction (XRD) pattern and high resolution transmission electron microscopy (HRTEM) confirms the good crystalline nature of these Si NCs.

Enhanced UV photosensitivity from rapid thermal annealed vertically aligned ZnO nanowires.

We report on the major improvement in UV photosensitivity and faster photoresponse from vertically aligned ZnO nanowires (NWs) by means of rapid thermal annealing (RTA). The ZnO NWs were grown by vapor-liquid-solid method and subsequently RTA treated at 700°C and 800°C for 120 s. The UV photosensitivity (photo-to-dark current ratio) is 4.

Size-dependent visible absorption and fast photoluminescence decay dynamics from freestanding strained silicon nanocrystals.

In this article, we report on the visible absorption, photoluminescence (PL), and fast PL decay dynamics from freestanding Si nanocrystals (NCs) that are anisotropically strained. Direct evidence of strain-induced dislocations is shown from high-resolution transmission electron microscopy images. Si NCs with sizes in the range of approximately 5-40 nm show size-dependent visible absorption in the range of 575-722 nm, while NCs of average size <10 nm exhibit strong PL emission at 580-585 nm.