Deep and alignment free patterned etching of GaN surface using an atomic force microscope.

Successful deep and alignment-free patterned etching on GaN using atomic force microscope (AFM) local oxidation followed by in-situ chemical etching is demonstrated. Oxide ridges are grown on GaN on an AFM by applying positive sample bias at 80% humidity, with the oxidation reaction expedited by UV light. The oxide ridges are then etched by HCl solution, leaving troughs in the GaN surface.

Capillary-electrode alignment by an optical-fiber connector for amperometric detection in capillary electrophoresis.

We describe here an electrochemical cell ideal for routine analysis of CE-EC experiments (capillary electrophoresis coupled with electrochemical detection). The cell was modified from a fiber-optic connector, named MT, which allowed frequent change and fast alignment between a pair of 4-strand fiber ribbons. The relative standard deviations of the current response and migration time for 100 microM dopamine were, respectively, 3.